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Synthesis of Microcrystalline Silicon Films by Low Energy Electron-Beam-Induced Deposition at Cryogenic Temperature

Published online by Cambridge University Press:  01 February 2011

Tetsuya Sato ,
Kiyokazu Nakagawa ,
Yutaka Aoki  and
Shouji Sato
Tetsuya Sato
Affiliation:
Univ. of Yamanashi Clean Energy Research Center Takeda-4, Kofu, Yamanashi 400–8511, Japan
Kiyokazu Nakagawa
Affiliation:
Univ. of Yamanashi Crystal Science and Tech., Miyamae-cho 7, Kofu, Yamanashi 400–0015, Japan
Yutaka Aoki
Affiliation:
Miyatsu Co., LTD. Uenohara 8154–36, Uenohara-cho, Kitatsuru-gun, Yamanashi 409–0112, Japan
Shouji Sato
Affiliation:
Miyatsu Co., LTD. Uenohara 8154–36, Uenohara-cho, Kitatsuru-gun, Yamanashi 409–0112, Japan
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Abstract

We have proposed an advanced method for formation of semiconductor thin films at substrates temperatures below 100K. We have synthesized amorphous silicon (a-Si:H) and microcrystalline silicon (μc-Si:H) films using low-energy electron-beam-induced-chemical vapor deposition (EBICVD) onto cooled substrates which adsorb source gases (SiH4 or Si2H6) at cryogenic temperature. The temperature dependence on growth rate of the films, hydrogen content and optical constants were investigated. The μc-Si:H could be formed at 40–45 K on SiO2 using He-discharged-EBICVD with SiH4. The crystallinity of silicon was evaluated by Raman scattering spectroscopy and X-ray diffraction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 832: Symposium F – Group IV Semiconductor Nanostructures , 2004 , F10.19
Copyright
Copyright © Materials Research Society 2005

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References

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