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Synthesis of III-Nx-V1-x Thin Films by N Ion Implantation

Published online by Cambridge University Press:  21 March 2011

K. M. Yu ,
W. Walukiewicz ,
W. Shan ,
J. Wu ,
J. W. Beeman ,
J. W. Ager III ,
E. E. Haller  and
M. C. Ridgway
K. M. Yu
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720
W. Walukiewicz
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720
W. Shan
Affiliation:
OptiWork, Inc. Fremont, CA 94538
J. Wu
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720
J. W. Beeman
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720
J. W. Ager III
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720
E. E. Haller
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720
M. C. Ridgway
Affiliation:
Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, Australia
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Abstract

Dilute III-Nx-V1-x alloys were successfully synthesized by nitrogen implantation in GaAs and InP. The fundamental band gap energy for the ion beam synthesized III-Nx-V1-x alloys was found to decrease with increasing N implantation dose in a manner similar to that commonly observed in epitaxially grown GaNxAs1-x and InNxP1-x thin films. The fraction of N occupying anion sites (“active” N) in the GaNxAs1-x layers formed by N implantation was thermally unstable and decreased with increasing annealing temperature. In contrast, thermally stable InNxP1-x alloys with N mole fraction as high as 0.012 were synthesized by N implantation in InP. Moreover, the N activation efficiency in InP was at least a factor of two higher than in GaAs under similar processing conditions. The low N activation efficiency (<20%) in GaAs can be improved by co-implanting Ga and N in GaAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 650: Symposium R – Microstructural Processes in Irradiated Materials-2000 , 2000 , R8.3/O13.3
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Weyers, M., Sato, M., Ando, H., Jpn. J. Appl. Phys. 31, L853 (1992).Google Scholar
2. Baillargeon, J. N., Cheng, K. Y., Hofler, G. F., Pearah, P. J. and Hsieh, K. C., Appl. Phys. Lett. 60, 2540 (1992).Google Scholar
3. Kondow, M., Uomi, K., Hosomi, K. and Mozume, T., Jpn. J. Appl. Phys. 33 L1056 (1994).Google Scholar
4. Bi, W. G., and Tu, C. W., J. AppI. Phys. 80, 1934 (1996).Google Scholar
5. Uesugi, K., Marooka, N. and Suemune, I., Appl. Phys. Lett. 74, 1254 (1999).Google Scholar
6. Shan, W., Yu, K. M., Walukiewicz, W., Ager, J. W., Haller, E. E. and Ridgway, M. C., Appl. Phys. Lett. 75, 1410 (1999).Google Scholar
7. Bi, W. G. and Tu, C. W., Appl. Phys. Lett. 69, 3710 (1996).Google Scholar
8. Xin, X. P. and Tu, C. W., Appl. Phys. Lett. 72, 2442 (1998).Google Scholar
9. Kondow, M., Kitatani, T., Nakatsuka, S., Larson, M. C., Nakahara, K., Yazawa, Y., Okai, M. and Uomi, K, IEEE J. Sel. Topics in Quantem Elect. 3, 719 (1997).Google Scholar
10. Kondow, M., Kitatani, T., Larson, M. C., Nakahara, K., Uomi, K. and Inoue, H., J. Crystal Growth 188, 255 (1998).Google Scholar
11. Friedman, D. J., Geisz, J. F., Kurtz, S. R., Myers, D. and Olson, J. M, J. Cryst. Growth 195, 409 (1998).Google Scholar
12. Kurtz, S. R., Allerman, A.A., Jones, E.D., Gee, J.M., Banas, J.J., and Hammons, B.E., Appl. Phys. Lett. 74, 729(1999).Google Scholar
13. Neugebauer, J. and Walle, C. G. Van, Phys. Rev. B51, 10568 (1995).Google Scholar
14. Wang, L. -W., Bellaiche, L., Wei, S. -H., and Zunger, A., Phys. Rev. Lett. 80, 4725 (1998).Google Scholar
15. Jones, E. D., Modine, N. A., Allerman, A. A., Kurtz, S. R., Wright, A. F., Tozer, S. T., and Wei, X., Phys. Rev. B60, 4430 (1999).Google Scholar
16. Lindsay, A. and O'Reilly, E. P., Solid State Commun. 112, 443 (1999).Google Scholar
17. Shan, W., Walukiewicz, W., Ager, J. W. III, Haller, E. E., Geisz, J. F., Friedman, D. J., Olson, J. M., and Kurtz, S. R., Phys. Rev. Lett. 82, 1221(1999).Google Scholar
18. Walukiewicz, W., Shan, W., Ager, J. W. III, Chamberlin, D. R., Haller, E. E., Geisz, J. F., Friedman, D. J., Olson, J. M., and Kurtz, S. R., in Photovoltaics for the 21st Century, edited by Kapur, V. K., McDonnell, R. D., Carlson, D., Ceasar, G. P., Rohatgi, A. (Electrochemical Society Press, Pennington, 1999) p. 190.Google Scholar
19. Shan, W., Yu, K. M., Walukiewicz, W., Xin, X. P., and Tu, C. W., unpublished data (2000).Google Scholar