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Synthesis of Highly Photosensitive a-SiC:H Films at High Deposition Rate by Plasma Decomposition of SiH4 and C2H2

  • Y. Nakayama (a1), S. Akita (a1), K. Wakita (a1) and T. Kawamura (a1)

Abstract

Highly photosensitive a-SiC:H films exhibiting ημτ-product more than 10−6 cm2/V at the band gap of 1.9 eV are prepared under the high deposition rate around 6μm/h by a plasma decomposition of SiH4-C2H2 source mixture gas at higher rf power. It is also shown that the SiH4-C2H2 gas system has a feature of the carbon incorporation into the films with the content nearly equal to that in the source mixture gas and hence is suitable for the high rate deposition process. This advantage and in addition the requirement of the higher rf power for obtaining the films with good electrical performance are discussed in terms of the dissociation reaction of the source gas and the secondary gas phase reactions in the plasma.

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1) Nakayama, Y., Akita, S., Nakano, M. and Kawamura, T., J. Non-Cryst. Solids 97&98, 1447 (1987).
2) Akita, S., Wakita, K., Nakayama, Y. and Kawamura, T., Proc. 1st Int. Conf. on Amorphous and Crystalline SiC and Related Materials, Washington D.C., December, 1987.
3) Schmitt, J.P.M., J. Non-Cryst. Solids 59&60, 649 (1983).
4) Okabe, H., Cody, R.J. and Allen, J.E. Jr, Chem. Phys. 92, 67 (1985).
5) Mohr, W.C., Tsai, C.C. and Street, R.A., Mat. Res. Soc. Symp. Proc., 70, 319 (1986).

Synthesis of Highly Photosensitive a-SiC:H Films at High Deposition Rate by Plasma Decomposition of SiH4 and C2H2

  • Y. Nakayama (a1), S. Akita (a1), K. Wakita (a1) and T. Kawamura (a1)

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