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Synthesis of Critical Point Energies for 1 MeV Electron Irradiated P-Type Silicon

Published online by Cambridge University Press:  25 February 2011

Onofrio L. Russo ,
Katherine A. Dumas  and
Michael H. Herman
Onofrio L. Russo
Affiliation:
New Jersey Institute of Technology, Department of Physics, Newark, NJ 07102
Katherine A. Dumas
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 93555
Michael H. Herman
Affiliation:
Power Spectra Inc., Sunnyvale, CA
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Abstract

The critical point energies, E0, E1 and the Lorentz broadening parameter, Γ, for boron doped p-type silicon were obtained by electrolyte-electroreflectance (EER) at 297K and electron beam electroreflectance (EBER) at 297K and 88K. Electron irradiated samples for fluences of 1014 and 1016 e-/cm2 were compared to the samples before irradiation. The value of the low energy weaker structure, Eo and the higher energy main structure, Ei are obtained by the synthesis of two Lorentz line shapes to fit the experimentally obtained composite spectra. The values as determined by EER were all found to increase with radiation as expected. The values for Eo as found by EBER were consistent with those of EER but those of E1 were not.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 213
Copyright
Copyright © Materials Research Society 1993

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References

1. See for example, Kinchin, G. H. and Pease, R. S., Reports on Progress in Physics, 18, 1 (1955).Google Scholar
2. Wertheim, G. K., Phys. Rev. 110, 1272 (1958).CrossRefGoogle Scholar
3. Rosenzweig, W., Gummel, H. K., and Smits, F. M., Bell Syst. Tech. J 42, 399 (1963).CrossRefGoogle Scholar
4. Cardona, M., Solid State Physics, Suppl. 11, eds. Seitz, et al. (Academic Press, New York).Google Scholar
5. Aspnes, D. E. and Rowe, J. E., Solid State Commun. 8, 1145(1970).Google Scholar
6. Aspnes, D. E. and Rowe, J. E., Phys. Rev. B5, 4022 (1972).Google Scholar
7. Aspnes, D. E., Phys. Rev. Lett. 28, 168 (1972).CrossRefGoogle Scholar
8. McCoy, J. H. and Wittry, D. B., J. Appl Phys. 42, 1174 (1971).CrossRefGoogle Scholar
9. Raccah, P. M., Garland, J. W., Buttrill, S. E. Jr, Franke, L. and Jackson, J., Appl Phys. Lett. 52, 1584 (1988).Google Scholar
10. Aspnes, D. E., Surf. Sci. 37, 418 (1973).CrossRefGoogle Scholar
11. Aspnes, D. E. and Rowe, J.E., Phys. Rev. Lett. 27, 188 (1971).CrossRefGoogle Scholar
12. Brust, D., Phys. Rev. 134, 1337 (1964).CrossRefGoogle Scholar
13. Kondo, K. and Moritani, A., Nuovo Cimento, 39, 387 (1977).CrossRefGoogle Scholar
14. Almazov, L. A., Gavrilenko, V. I., Zuev, V. A. and Litovchenko, G., Sov. Phys. Semicond. 12(8), 913 (1978).Google Scholar
15. Mooney, P. M., Cheng, L. J., Suli, M., Gerson, J. D. and Corbett, J. W., Phys. Rev. B. 15, 3836 (1977).Google Scholar
16. Dumas, K. A., Lowry, L. and Russo, O. L., Proc. 19th IEEE Photovoltaic Specialists Conf. 654 (1987).Google Scholar