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Synthesis of Continuous SmSi2 Layers on Si by Samarium Ion Implantation Using A Metal Vapor Vacuum Arc Ion Source

Published online by Cambridge University Press:  17 March 2011

X.Q. Cheng ,
H.N. Zhu  and
B.X. Liu
X.Q. Cheng
Affiliation:
Department of Materials Science and EngineeringTsinghua University, Beijing 100084, CHINA
H.N. Zhu
Affiliation:
Department of Materials Science and EngineeringTsinghua University, Beijing 100084, CHINA
B.X. Liu
Affiliation:
Department of Materials Science and EngineeringTsinghua University, Beijing 100084, CHINA
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Abstract

Samarium ion implantation was conducted to synthesize Sm-disilicide films on silicon wafers, using a metal vapor vacuum arc ion source and the continuous SmSi2 films were directly obtained with neither external heating during implantation nor post-annealing. Diffraction and surface morphology analysis confirmed the formed Sm-disilicilde films were of a fine crystalline structure under appropriate experimental conditions. Besides, the formation mechanism of the SmSi2phase is also discussed in terms of the temperature rise caused by ion beam heating and the effect of ion dose on the properties of the SmSi2films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 647: Symposium O – Ion Beam Synthesis & Processing of Advanced Materials , 2000 , O5.29
Copyright
Copyright © Materials Research Society 2001

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