Hostname: page-component-8448b6f56d-jr42d Total loading time: 0 Render date: 2024-04-24T03:06:23.348Z Has data issue: false hasContentIssue false
  • English
  • Français

Synthesis of Buried Layers of β Sic in Single Crystal Silicon

Published online by Cambridge University Press:  28 February 2011

Karen J Reeson ,
Peter L F Hemment ,
John Stoemenos ,
John R Davis  and
George K Celler
Karen J Reeson
Affiliation:
Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, U.K.
Peter L F Hemment
Affiliation:
Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, U.K.
John Stoemenos
Affiliation:
Department of Physics, University of Thessaloniki, Thessaloniki, Greece.
John R Davis
Affiliation:
Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, U.K.
George K Celler
Affiliation:
British Telecom Research Laboratories, Martlesham Heath, Ipswich, U.K. °AT&T Bell Laboratories, Murray Hill, New Jersey, U.S.A.
Get access

Abstract

It is demonstrated that buried layers of β SiC can be fabricated within single crystal silicon substrates by implanting high doses of energetic carbon ions. If the implantation temperature is sufficiently high >625°C then the β SiC grows epitaxially within the silicon, during implantation, using the substrate as a seed. During the subsequent high temperature anneal redistribution of the implanted species occurs to give a well defined buried layer of β SiC overlain by single crystal silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 473
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Borders, J.A., Picraux, S.T. and Beezhold, W., Appl.Phys.Lett. 18, 509 (1971).Google Scholar
2 Kimura, T., Kagiyuama, S. and Yugo, S., Thin Solid Films, 81, 319 (1981)CrossRefGoogle Scholar
3 Kimura, T., Kagiyama, S. and Yugo, S., Thin Solid Films, 94, 191(1982)Google Scholar
4 Kroko, L., Golecki, I. and Glass, H.L.,Proc. Materials Research Society, 45, 323, (1985)Google Scholar
5 Wilson, I.H., Ion Beam Modification of Insulators, edited by Mazzoldi, P. and Arnold, G.,Elsevier, The Netherlands,Chapter 7, Synthesis of Dielectricl Layers in Silicon by Ion Implantation (1987)Google Scholar
6 Reeson, K.J., Hemment, P.L.F., Stoemenos, J., Davis, J.R. and Celler, G.K., 5th Oxford Conference on the Microscopy of Semiconducting Materials, OxfordOxford, April (1987) to be published in Inst. Phys. Conf. Ser.Google Scholar
7 Resson, K.J., Hemment, P.L.F., Stoemenos, J., Davis, J.R. and Celler, G.K. accepted for publication Appl. Phys. Lett. (1987).Google Scholar
8 Ommen, A.H. Van, Koek, B.H. and Viegers, M.P.A. Appl. Phys. Lett. 49, 1062 (1986).CrossRefGoogle Scholar
9 Margail, J. PhD. Thesis ENSERG LETI Grenoble (1987).Google Scholar
10 Ommen, A.H. van (private communication).Google Scholar
11 Marsh, CD. (private communication).Google Scholar
12 MacElwee, T.W. and Calder, I.D. IEEE SOS/SOI Workshop, Durango, Colorado (1987).Google Scholar
13 Maszara, W.P. Mat Res Symp. Proc. 93, Materials Modification and Growth using ion beams edited by U. Gibson, A.E. White and P.P. Pronko (1987).Google Scholar
14 Scanlon, P. (private communication).Google Scholar
15 Stoemenos, J. and Margail, J., Thin Solid Films, 135, 115 (1986).Google Scholar
16 Margail, J., Jassaud, C. and Bruel, M., Int. Conf. The Physics and Technology of Amorphous Si02 , Les Arcs, France (1987).Google Scholar