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Synthesis and thermoelectric properties of antifluorite materials

Published online by Cambridge University Press:  01 February 2011

Xiunu Sophie Lin ,
Dongli Wang ,
Matthew Beekman  and
George Nolas
Xiunu Sophie Lin
Affiliation:
xlin@cas.usf.edu, University of South Florida, Department of Physics, 4202 East Fowler Ave, Tampa, FL, 33620-5700, United States, 813-974-8236
Dongli Wang
Affiliation:
gnolas@cas.usf.edu, University of South Florida, Department of Physics, 4202 East Fowler Ave, Tampa, FL, 33620-5700, United States
Matthew Beekman
Affiliation:
mbeekman@mail.usf.edu, University of South Florida, Department of Physics, 4202 East Fowler Ave, Tampa, FL, 33620-5700, United States
George Nolas
Affiliation:
gnolas@cas.usf.edu, University of South Florida, Department of Physics, 4202 East Fowler Ave, Ta mpa, FL, 33620-5700, United States
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Abstract

The compounds Mg2X (where X=Si, Ge, Sn) crystallize in the antifluorite structure. They possess properties that are similar to that of the group IV elemental semiconductors thus they have long been recognized as good candidates for thermoelectric applications. In addition, their properties can be readily tuned by doping or alloying. However, optimal performance of these materials requires continued investigation. We present low-temperature transport properties measurements of Sb doped Mg2X. Structure-property relationships are reported while their thermoelectric properties are investigated systematically in order to elucidate their potential as thermoelectric materials.

Keywords

thermoelectricitythermal conductivitysemiconducting
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1044: Symposium U – Thermoelectric Power Generation , 2007 , 1044-U11-03
Copyright
Copyright © Materials Research Society 2008

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