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Synthesis and Oxidation Kinetics of Sol-Gel and Sputtered Tantalum Nitride Thin Films

Published online by Cambridge University Press:  10 February 2011

Gerald T. Kraus ,
Cory S. Oldweiler  and
Emmanuel P. Giannelis
Gerald T. Kraus
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
Cory S. Oldweiler
Affiliation:
Department of Electrical Engineering, University of Colorado at Boulder, Boulder, CO 80309
Emmanuel P. Giannelis
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
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Abstract

Tantalum nitride thin films were produced by nitridation of sol-gel tantala thin films. The oxidation kinetics and the activation energy for oxidation were investigated and compared to those of sputtered tantalum nitride thin films. Data was gathered from in situ sheet resistance measurements taken between 550 and 720 K. Sol-gel films exhibited parabolic oxidation kinetics and had an activation energy of 1.9 eV. Sputtered films displayed quartic oxidation kinetics at lower temperatures tending toward cubic kinetics at higher temperatures and had an activation energy of 1.6 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 410: Symposium S – Covalent Ceramics III-Science and Technology of Non-Oxides , 1995 , 295
Copyright
Copyright © Materials Research Society 1996

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References

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