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Synthesis and Modification of beta-C3N4 Materials by Ion-beam Processing

Published online by Cambridge University Press:  10 February 2011

Zhong-Min Ren ,
Yuan-Cheng Du ,
Zhi-Feng Ying ,
Fu-Ming Li  and
Yafei Zhang
Zhong-Min Ren
Affiliation:
Department of Physics, Fudan University, 200433 Shanghai, China
Yuan-Cheng Du
Affiliation:
Department of Physics, Fudan University, 200433 Shanghai, China
Zhi-Feng Ying
Affiliation:
Department of Physics, Fudan University, 200433 Shanghai, China
Fu-Ming Li
Affiliation:
Department of Physics, Fudan University, 200433 Shanghai, China
Yafei Zhang
Affiliation:
Department of Physics, Lanzhou University, 730000 Lanzhou, China
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Abstract

Covalent carbon nitride films have been synthesized by laser ablation and ion-beam coprocessing. Different laser ablations give different ablated graphite plasma. Beta- C3N4 polycrystalline has been found in the deposited films. Under laser energy of 50 mJ per pulse, the adoption of 532 nm laser used for ablation of graphite is proposed for the purpose of production of good carbon nitride films. The C-N crystal structures can be improved by followed ion-beam processing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 410: Symposium S – Covalent Ceramics III-Science and Technology of Non-Oxides , 1995 , 313
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

1. Liu, A.Y. and Cohen, M.L., Science, 245 841(1989)Google Scholar
2. Cohen, M.L., Science, 261 307(1993)Google Scholar
3. Cuomo, J.J., Leary, P.A., Yu, D., Reuter, W., and Frisch, M., J.Vac.Sci.Technol. 16(2) 299(1979)Google Scholar
4. Chen, M.Y., Li, D., Lin, X., Dravid, V.P., Chung, Y.W., Wong, M.S., and Sproul, W.D., J.Vac.Sci.Technol. A11(3) 521(1993)Google Scholar
5. Han, H.X. and Feldman, B.J., Solid State Commun., 65(9) 921(1988)Google Scholar
6. Wixom, M.R., J.Am.Ceram.Soc., 73 1973(1990)Google Scholar
7. Fujimoto, F. and Ogata, K.: Jpn.J.Appl.Phys. 32 420(1993)Google Scholar
8. Niu, C., Lu, Y.Z., and Lieber, C.M., Science, 261 334(1993)Google Scholar
9. Schnick, W.: Angew.Chem.Int.Ed.Engl. 32(11) 1580(1993)Google Scholar
10. Corkill, J.L. and Cohen, M.L.: Phys.Rev. B48(23) 17622(1993)Google Scholar
11. Ren, Z.M., Du, Y.C., Ying, Z.F., Qiu, Y., Xiong, X.X., Wu, J.D., and Li, F.M., Appl.Phys. Lett. 65(11) 1361(1994)Google Scholar
12. Ren, Z.M., Du, Y.C., Qiu, Y., Wu, J.D., Ying, Z.F., Xiong, X.X., and Li, F.M., Phys.Rev.B, 51 5274(1995)Google Scholar
13. Reader, J. and Corliss, C.H., Wiese, W.L., and Martin, G.A., in the “Wavelengths and Transition Probabilities for Atoms and Atomic Ions” NSRDS-NBS 68 (U.S. Government Printing Office 1980)Google Scholar
14. Herzberg, G., in the “Molecular spectra and molecular structure I. Spectra of diatomic molecules”, 2nd Ed.(Van Nostrand Reinhold, New York, 1950)Google Scholar