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Synthesis and Electronic Properties of Single-Crystalline Indium Nitride Nanowires

Published online by Cambridge University Press:  15 February 2011

Tao Tang
Affiliation:
Dept. of E.E.-Electrophysics, University of Southern California, Los Angeles, CA90089
Song Han
Affiliation:
Dept. of E.E.-Electrophysics, University of Southern California, Los Angeles, CA90089
Wu Jin
Affiliation:
Dept. of E.E.-Electrophysics, University of Southern California, Los Angeles, CA90089
Xiaolei Liu
Affiliation:
Dept. of E.E.-Electrophysics, University of Southern California, Los Angeles, CA90089
Chao Li
Affiliation:
Dept. of E.E.-Electrophysics, University of Southern California, Los Angeles, CA90089
Daihua Zhang
Affiliation:
Dept. of E.E.-Electrophysics, University of Southern California, Los Angeles, CA90089
Chongwu Zhou
Affiliation:
Dept. of E.E.-Electrophysics, University of Southern California, Los Angeles, CA90089
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Abstract

InN nanowires were synthesized and characterized using a variety of techniques. A two-zone chemical vapor deposition technique was employed to operate the vapor generation and the nanowire growth at differential temperatures, leading to high-quality products and growth rates as high as 4–10 μm/hour. The as-grown nanowires showed highly single-crystalline structures and precisely controlled diameters by using monodispersed gold clusters as the catalyst. Devices consisting of single nanowires have been fabricated to explore their electronic transport properties. The temperature dependence of the conductance revealed thermal emission as the dominating transport mechanism.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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References

1. Neumayer, D. A. and Ekerdt, J. G., Chem. Mater. 8, 925(1996).Google Scholar
2. Strite, S. and Morkoc, H., J. Vac. Sci. Technol. B 10, 1237(1992).Google Scholar
3. O'Leary, S. K., Foutz, E., Shur, M. S., Bhapkar, U. V. and Eastman, L. F., J. Appl. Phys. 83, 826829(1998).Google Scholar
4. Huang, Y., Duan, X., Cui, Y. and Lieber, C. M., Nano Lett. 2(2), 101(2002).Google Scholar
5. Zhang, J., Zhang, L., Peng, X. and Wang, X., J. Mater. Chem. 12, 802 (2002).Google Scholar
6. Liang, C., Chen, L., Hwang, J., Chen, K., Hung, Y. and Chen, Y., Appl. Phys. Lett. 81(1), 22(2002).Google Scholar
7. Han, S., Jin, W., Tang, T., Li, C., Zhang, D., Liu, X., Han, J., Zhou, C., J. Mater. Res. 18, 245(2003).Google Scholar
8. Gudiksen, M.S. and Lieber, C.M., J. Am. Chem. Soc. 122, 8801 (2000).Google Scholar
9. Zubrilov, A., in Properties of Advanced SemiconductorMaterials GaN, AlN, InN, BN, SiC, SiGe, edited by Levinshtein, M.E., Rumyantsev, S.L., Shur, M.S., (JohnWiley & Sons Inc., 2001), p. 4966.Google Scholar
10. Liu, X., Li, C., Han, S., Han, J., Zhou, C., Appl. Phys. Lett. 82 (12), 1950(2003).Google Scholar