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Synthesis and Electrical Properties of Garnet-type Solid Oxide Electrolyte Thin Films from Solution Route

Published online by Cambridge University Press:  18 March 2013

Hirofumi Matsuda
Affiliation:
Energy Technology Research Institute, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba 305-8568, Japan
Eiji Hosono
Affiliation:
Energy Technology Research Institute, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba 305-8568, Japan
Haoshen Zhou
Affiliation:
Energy Technology Research Institute, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba 305-8568, Japan
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Abstract

Development of Al-stabilized Li7La3Zr2O12 (LLZO) fast Li ion conducting thin films was attempted by chemical solution deposition (CSD) method with the nominal composition of Li5.95Al0.35La3Zr2O12. The films were crystallized at 600°C on Pt-coated Si substrates in almost single phase without a preferred orientation to any crystallographic axis. Subsequent thermal annealing at 760°C improved packing of LLZO grains with the film thickness of 1.1μm. AC impedance measurements were conducted both with Li reversible and Au blocking microelectrodes deposited on the films annealed at 760°C. Total Li ion conductivity σtotal comprised of bulk and grain boundary contribution was studied. The temperature dependence of σtotal was described with single thermal activation process and σtotal∼2x10-5 S/cm and activation energy of Ea=0.58eV were estimated. These values may be attributed to tetragonal modification of LLZO crystal.

Type
Articles
Copyright
Copyright © Materials Research Society 2013

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References

REFERENCES

O’Callaghan, M. P., Powell, A. S., Titman, J. J., Chen, G. Z., and Cussen, E. J., Chem. Mater. 20 2360 (2009).CrossRefGoogle Scholar
Murugan, R., Thangadurai, V., and Weppner, W., Angew. Chem. Int. Ed. 46 7778 (2007).CrossRefGoogle Scholar
Buschmann, H., Doelle, J., Berendts, S., Kuhn, A., Bottke, P., Wilkening, M., Heitjans, P., Senyshyn, A., Ehrenberg, H., Lotnyk, A., Duppel, V., Kienlee, L., and Janek, J., Phys. Chem. Chem. Phys. 13 19378 (2011).CrossRefGoogle Scholar
Adams, S. and Rao, R. P., J. Mater. Chem. 22 1426 (2012).CrossRefGoogle Scholar
Geiger, C. A., Alekseev, E., Lazic, B., Fisch, M., Armbruster, T., Langner, R., Fechtelkord, M., Kim, N., Pettke, T., and Weppner, W., Ionorg. Chem. 50 1089 (2011).CrossRefGoogle Scholar
Jones, S. D. and Akridge, J. R., Solid State Ionics 8688 Part 2 1291 (1996).CrossRefGoogle Scholar
Brinker, J. C. and Scherer, G. W. in SOL-GEL SCIENCE: The Physics and Chemistry of Sol-Gel Processing, ed. Brinker, J. C. and Scherer, G. W. (Academic Press, 1990).Google Scholar
Kotobuki, M., Munakata, H., Kanamura, K., Sato, Y., and Yoshida, T., J. Electrochem. Soc. 157 A1076 (2010).CrossRefGoogle Scholar