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Synchrotron White Beam Topography Studies of Residual Stress in SiC Single Crystal Wafers with Epitaxial Thin Films

Published online by Cambridge University Press:  21 February 2011

W. Huang ,
Q. Wang ,
M. Dudley ,
F. P. Chiang ,
J. Parsons  and
C. Fazi
W. Huang
Affiliation:
Dept. of Materials Science and Engineering, SUNY at SB, Stony Brook, NY 11794-2275
Q. Wang
Affiliation:
Dept. of Mechanical Engineering, SUNY at SB, Stony Brook, NY11794-2300
M. Dudley
Affiliation:
Dept. of Materials Science and Engineering, SUNY at SB, Stony Brook, NY 11794-2275
F. P. Chiang
Affiliation:
Dept. of Mechanical Engineering, SUNY at SB, Stony Brook, NY11794-2300
J. Parsons
Affiliation:
Oregon Graduate Institute, Beaverton, Oregon 97006;
C. Fazi
Affiliation:
U.S. Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD 20783, USA
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Abstract

The residual stress in a 6H-SiC wafer with a 3C-SiC epitaxial overlayer is determined by the technique of Synchrotron white beam x-ray topography (SWBXT). The short wavelength and high energy attributes of synchrotron radiation are exploited to very accurately determine the wafer curvature. Different approaches including absorption edge contour (AEC) mapping, multiple diffraction line (MDL) analysis and diffracted x-ray beam divergence (DXBD) analysis in both transmission and reflection geometry are demonstrated. The residual stress distribution is calculated from the wafer curvature measurement.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 399: Symposium D – Evolution of Epitaxial Structure and Morphology , 1995 , 425
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

1 Flinn, P. A., in Thin films: Stresses and Mechanical Properties, Mat. Res. Soc. Symp. Proc., Bravman, J. C., Nix, W. D., Barnett, D. M. and Smith, D. A., eds.130, 41 (1989)Google Scholar
2 Segmuller, A., Angilelo, J. and LaPlaca, S. J., J. of Appl. Phys, 51, 6224 (1980)Google Scholar
3 Goyal, D., Ng, W., King, A. H. and Bilello, J. C., in Electronic Packaging Materials Science III, Mat. Res. Soc. Symp. Proc., 108, 39 (1988)Google Scholar
4 Loopstra, O. B., Snek, E. R., Keijser, T. H. and Mittemeijer, E. J., Phys. Review B, 44, 13519 (1991)Google Scholar
5 Aloupojannis, P., Travlos, A. and Papastaikoudis, C., Vaccum, 43, 807 (1992)Google Scholar
6 Chen, H., White, G. E., and Stock, S. R., Materials letters, 4, 61, (1986)Google Scholar
7 Ishikawa, T., Kitano, T. and Matsui, J., J. Appl. Cryst., 20, 344 (1987)Google Scholar
8 Naukkarinen, K. and Tuomi, T., Phys. stat. sol. (a) 687 (1982)Google Scholar
9 Morelhao, S. L. and Carsodo, L. P., J. of Crystal Growth, 110, 543 (1991)Google Scholar
10 Tuomi, T. and Naukkarinen, K., Physics Review B, 24, 6125 (1981)Google Scholar
11 Barnett, S. J., Tanner, B. K. and Brown, G. T., in Advanced Photon and Particle Techniques for the Characterization of Defects in Solids Symposium, Mat. Res. Soc. Symp. Proc., 83 (1984)Google Scholar
12 Hart, M., J. of Crystal Growth, 55, 409, (1981)Google Scholar
13 Timoshenko, S. and Woinowsky-Krieger, S., Theory of Plates and Shells, McGraw-Hill,(1959)Google Scholar
14 Gerald Stoney, G., in The Tension of Metallic Films deposited by Electrolysic, Proceedings of the Royal Society(London), A82, 172, (1909)Google Scholar
15 Hoffman, R. W., in The Mechanical Properties of Thin Condensed Films, Physics of Thin Films,Hass, G. and Thun, R. E., ed., Academic Press, New York, vol. 3, 211 (1966)Google Scholar