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Synchrotron Radiation X-ray Microdiffraction Study of Cu Interconnects

Published online by Cambridge University Press:  10 February 2011

X. Zhang
Affiliation:
Electrical and Computer Engineering Department and Center for Nanotechnology, University of Wisconsin-Madison, Madison, Wisconsin 53706
H. Solak
Affiliation:
Electrical and Computer Engineering Department and Center for Nanotechnology, University of Wisconsin-Madison, Madison, Wisconsin 53706
F. Cerrina
Affiliation:
Electrical and Computer Engineering Department and Center for Nanotechnology, University of Wisconsin-Madison, Madison, Wisconsin 53706
B. Lai
Affiliation:
Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439
Z. Cai
Affiliation:
Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439
P. Ilinski
Affiliation:
Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439
D. Legnini
Affiliation:
Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439
W. Rodrigues
Affiliation:
Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439
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Abstract

We have used synchrotron radiation x-ray microdiffraction to study the microstructure and strain variation of copper interconnects. Different types of local microstructures have been found in different samples. Our data show that the Ti adhesion layer has a dramatic effect on Cu microstructure. On site electromigration test has been conducted and strain profile along the same interconnect line was measured before and after this electrical stressing. Cu fluorescence scan was used to find the mass variations along the line. Voids and hillocks can be clearly identified in this scan. x-ray micro-diffraction was used to measure the strain change around the interesting regions.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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References

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