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Synchrotron Radiation Studies of Platinum Silicide Thin Films

Published online by Cambridge University Press:  15 February 2011

T. K. Sham
Affiliation:
Department of Chemistry, The University of Western Ontario, London, Ontario, Canada
S. J. Naftel
Affiliation:
Department of Chemistry, The University of Western Ontario, London, Ontario, Canada
A. Bzowski
Affiliation:
Department of Chemistry, The University of Western Ontario, London, Ontario, Canada
S. R. Das
Affiliation:
National Research Council, Institute for Microstructural Science, Ottawa, Canada
D.-X. Xu
Affiliation:
National Research Council, Institute for Microstructural Science, Ottawa, Canada
S. M. Heald
Affiliation:
Pacific Northwest Laboratory, Richland, WA
D. Brewe
Affiliation:
Pacific Northwest Laboratory, Richland, WA
M. Kuhn
Affiliation:
Brookhaven National Laboratory, Upton, NY
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Abstract

PtSi thin films prepared by UHV sputter-deposition procedures on n-type Si(100) wafers have been studied with the following techniques: (a) X-ray absorption fine structure spectroscopy at the Si K-edge, Si L2,3-edge, and Pt L3-edge; (b) X-ray reflectivity at photon energies below and above the Pt L3-edge threshold and (c) Photoemission. These techniques provide valuable information about the electronic structure, morphology, local structure, thickness, density and roughness, and surface and interface properties of the films. Preliminary results from the application of these techniques to the study of several PtSi thin films (with thickness from several hundreds to thousands of Å) are reported.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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References

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