Hostname: page-component-77c89778f8-swr86 Total loading time: 0 Render date: 2024-07-19T12:35:48.089Z Has data issue: false hasContentIssue false
  • English
  • Français

Synchrotron Radiation Studies of Platinum Silicide Thin Films

Published online by Cambridge University Press:  15 February 2011

T. K. Sham ,
S. J. Naftel ,
A. Bzowski ,
S. R. Das ,
D.-X. Xu ,
S. M. Heald ,
D. Brewe  and
M. Kuhn
T. K. Sham
Affiliation:
Department of Chemistry, The University of Western Ontario, London, Ontario, Canada
S. J. Naftel
Affiliation:
Department of Chemistry, The University of Western Ontario, London, Ontario, Canada
A. Bzowski
Affiliation:
Department of Chemistry, The University of Western Ontario, London, Ontario, Canada
S. R. Das
Affiliation:
National Research Council, Institute for Microstructural Science, Ottawa, Canada
D.-X. Xu
Affiliation:
National Research Council, Institute for Microstructural Science, Ottawa, Canada
S. M. Heald
Affiliation:
Pacific Northwest Laboratory, Richland, WA
D. Brewe
Affiliation:
Pacific Northwest Laboratory, Richland, WA
M. Kuhn
Affiliation:
Brookhaven National Laboratory, Upton, NY
Get access

Abstract

PtSi thin films prepared by UHV sputter-deposition procedures on n-type Si(100) wafers have been studied with the following techniques: (a) X-ray absorption fine structure spectroscopy at the Si K-edge, Si L2,3-edge, and Pt L3-edge; (b) X-ray reflectivity at photon energies below and above the Pt L3-edge threshold and (c) Photoemission. These techniques provide valuable information about the electronic structure, morphology, local structure, thickness, density and roughness, and surface and interface properties of the films. Preliminary results from the application of these techniques to the study of several PtSi thin films (with thickness from several hundreds to thousands of Å) are reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 402: Symposium H – Silicide Thin Films-Fabrication, Properties and Applications , 1995 , 587
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. See for example, Appl. Surf Sci. 53, (1991); the entire volume deals with metal silicide and its application in microelectronics.Google Scholar
2. Das, S.R., Xu, D.-X., Phillips, J., McCaffrey, J., LeBrum, L. and Naem, A., MRS Symp. Proc. 318, 129 (1994).Google Scholar
3. See for example, “X-ray Absorption Fine Structure” Proceedings for the XAFS VIII,. edited by Baberschke, K. and A. Arvanitis (Physica B 208–209, Elsevier Science, Amnsterdam, 1995).Google Scholar
4. Heald, S.M. and Barrera, E.V., Faraday Disc. Chem. Soc. 89, 21 (1990).Google Scholar
5. Rossi, G., Surf Sci. Rep. 7, 1 (1987).Google Scholar
6. Coulthard, I., Naftel, S.J. and Sham, T.K. (to be published).Google Scholar
7. Rossi, G., Chandesris, D., Roubin, P. and Lecante, J., Phys. Rev. B, 34, 7455 (1986).Google Scholar
8. Heald, S.M., Jayanetti, J.K.D., Bright, A.A. and Rubloff, G.W., J. Vac. Sci. Technol. A, 8, 2046 (1990).Google Scholar