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Symmetry of Electrons and Holes in Lightly Photo-Excited InGaN LEDs

Published online by Cambridge University Press:  15 February 2011

T.A. Kennedy ,
E.R. Glaser ,
W.E. Carlos ,
P.P. Ruden  and
Shuji Nakamura
T.A. Kennedy
Affiliation:
Naval Research Laboratory, Washington, DC 20375, kennedy@bloch.nrl.navy.mil
E.R. Glaser
Affiliation:
Naval Research Laboratory, Washington, DC 20375, kennedy@bloch.nrl.navy.mil
W.E. Carlos
Affiliation:
Naval Research Laboratory, Washington, DC 20375, kennedy@bloch.nrl.navy.mil
P.P. Ruden
Affiliation:
University of Minnesota, Department of Electrical and Computer Engineering, Minneapolis, MN 55455
Shuji Nakamura
Affiliation:
Nichia Chemical Industries Ltd., Department of Research and Development, Tokushima, Japan
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Abstract

The symmetry of the recombining electrons and holes in lightly photo-excited InGaN LEDs revealed through ODMR is related to the physical structure, band structure and defects present. Calculations of the electron-g within the k•p formalism give the average shift from the free-electron value for GaN but are not fully reconciled with the anisotropy. This theory is also extended to InGaN alloys for both pseudomorphic and relaxed layers. The average shift is close to the experimental values for the green LED. The strongly reduced hole anisotropies seen experimentally are explained by a recently published theory for acceptors in GaN.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G7.4
Copyright
Copyright © Materials Research Society 1999

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