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Sxes Study of Transition Metal Silicide Films and their Contacts to Semiconductors

  • H. Watabe (a1), M. Iwami (a2), M. Hirai (a2), M. Kusaka (a2), M. Kubota (a2), H. Nakamura (a3), M. Kawai (a4), H. Soezima (a4) and F. Akao (a5)...

Abstract

Spectra obtained by a new soft x-ray emission spectroscopy(SXES) apparatus again exhibited clear differences among Si-compounds and Si crystal. A non-destructive analysis of an annealed transition metal(TMSi:film)/Si(111) contact system was carried out using either the distinct differences of Si L2, 3 SXES spectra between TMSi's and Si single crystals or the fad that the soft x-ray production depth increases in a solid with the energy of the primary electron, Ep. It was shown that the apparatus was capable of exploring electronic and atomic structures of a multi-layered contact system grown on a Si(111) substrate.

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[1] Wiech, G. and Zoepf, E., in: Band Structure Spectroscopy of Metals and alloys, Eds. Fabian, D.J. and Watson, L.M. (Acad. Press, 1973) p.629.
[2] Murarka, S.P., Silicide for VLSI Applications (Academic Press, New York, 1983).
[3] Iwami, M., Hirai, M., Kusaka, M., Kubota, M., Nakamura, H., Watabe, H., Kawai, M. and Soezima, H., Jpn. J. Appl. Phys., 29, 1353 (1990).
[4] Nakamura, H., Iwami, M., Hirai, M., Kusaka, M., Akao, F. and Wa-tabe, H., Phys. Rev. B 41, 12092 (1990).
[5] Yeh, J.J. and Lindau, I., Atomic Data and Nuclear Data Table 32, 1 (1985).
[6] See, for example, Rubloff, G.W., Surf. Sci. 132, 268 (1983).
[7] Okuno, K., Iwami, M., Hiraki, A., Matsumura, M. and Asayama, K., Solid State Commun. 33, 899 (1980).
[8] Speier, W., private communication, to be published.
[9] Martinage, L., Cherief, N., Pasturel, A., Veullen, J.Y., Papaconstatopoulos, D. and Cryot-Lackmann, F., presented in the ICV-11/ICSS-7, Köln, September, 1989.
[10] Iwami, M., Nakamura, H., Hirai, M., Kusaka, M., Azuma, Y. and Akao, F., Jpn. J. Appl. Phys. Letters, 29, 264 (1990).
[11] Iwami, M., Kusaka, M., Hirai, M., Nakamura, H., Shibahara, K. and Matsunaml, H., Surf. Sci. 199, 467 (1988).

Sxes Study of Transition Metal Silicide Films and their Contacts to Semiconductors

  • H. Watabe (a1), M. Iwami (a2), M. Hirai (a2), M. Kusaka (a2), M. Kubota (a2), H. Nakamura (a3), M. Kawai (a4), H. Soezima (a4) and F. Akao (a5)...

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