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Surfaces and Interfaces for Controlled Defect Engineering

  • Edmund G. Seebauer (a1)

Abstract

The behavior of point defects within silicon can be changed significantly by controlling the chemical state at the surface. In ultrashallow junction applications for integrated circuits, such effects can be exploited to reduce transient enhanced diffusion, increase dopant activation, and reduce end-of-range damage.

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Surfaces and Interfaces for Controlled Defect Engineering

  • Edmund G. Seebauer (a1)

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