Hostname: page-component-76fb5796d-r6qrq Total loading time: 0 Render date: 2024-04-26T06:50:40.147Z Has data issue: false hasContentIssue false
  • English
  • Français

Surface Studies Relevant to the Initial Stages of Diamond Nucleation

Published online by Cambridge University Press:  21 February 2011

J. M. Lannon Jr ,
J. S. Gold  and
C. D. Stinespring
J. M. Lannon Jr
Affiliation:
Department of Physics, West Virginia University, Morgantown, WV 26506–6101
J. S. Gold
Affiliation:
Department of Physics, West Virginia University, Morgantown, WV 26506–6101
C. D. Stinespring
Affiliation:
Department of Chemical Engineering, West Virginia University, Morgantown, WV 26506–6101
Get access

Abstract

Studies of diamond heteroepitaxy on silicon indicate that C-C surface species act as nucleation precursors. We have investigated the conversion of the Si(100) 2×1 surface to SiC using C2H4 to obtain an understanding of how C-C species may be formed and to determine the effect of an O-adlayer on enhancing or selecting the reaction channel which leads to these species. Under appropriate conditions, the interaction between C2H4 and the clean silicon surface yields both SiC and C-C species. The presence of an O-adlayer significantly reduces the activity of silicon and enhances the formation of sp2 and sp3 C-C species. These results provide key insights into diamond nucleation conditions in conventional growth processes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 63
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Feng, Z., Komvopoulos, K., Brown, I.G., and Bogy, D.B., J. Appl. Phys. 74, 2841 (1993).Google Scholar
2. Stoner, B.R., Ma, G.-H.M., Woltner, S.D., and Glass, J.T., Phys. Rev. B45, 11067 (1992).Google Scholar
3. Lannon, J.M., Gold, J.S., and Stinespring, C.D., (to be published).Google Scholar
4. Stinespring, C.D. and Wormhoudt, J.C, J. Appl. Phys. 65, 1733 (1989).Google Scholar
5. Bozso, F., Yates, J.T. Jr., Choyke, W.J., and Muehlhoff, L., J. Appl. Phys. 57, 2771 (1985).Google Scholar
6. Lannon, J.M., Gold, J.S., and Stinespring, C.D., (to be published).Google Scholar
7. Fuchs, A., Scherer, J., Jung, K., and Ehrhardt, H., Thin Solid Films 232 (1993) 51. Google Scholar
8. Schulze, G. and Henzler, M., Surface Sci. 124, 336 (1983).Google Scholar
9. Kirby, R.E. and Lichtman, M., Surface Sci. 41, 447 (1974).Google Scholar
10. Grant, J.T. and Haas, T.W, Surface Sci. 23, 347 (1970).Google Scholar
11. Stinespring, C.D. and Lawson, W.F., Surface Sci. 150, 209 (1985).Google Scholar