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Surface States Influence in Al Schottky Barrier of Ge Nanowires

Published online by Cambridge University Press:  18 March 2013

Hanay Kamimura ,
Ricardo A. Simon ,
Olivia M. Berengue ,
Cleber A. Amorim ,
Adenilson J. Chiquito  and
Edson R. Leite
Hanay Kamimura*
Affiliation:
Departamento de Física, Universidade Federal de São Carlos CEP 13565-905, CP 676, São Carlos, São Paulo, Brasil
Ricardo A. Simon
Affiliation:
Universidade Tecnológica Federal do Paraná - Campus Apucarana
Olivia M. Berengue
Affiliation:
Universidade Estadual Paulista - Unesp
Cleber A. Amorim
Affiliation:
Departamento de Física, Universidade Federal de São Carlos CEP 13565-905, CP 676, São Carlos, São Paulo, Brasil
Adenilson J. Chiquito
Affiliation:
Departamento de Física, Universidade Federal de São Carlos CEP 13565-905, CP 676, São Carlos, São Paulo, Brasil
Edson R. Leite
Affiliation:
Laboratório Interdisciplinar de Eletroquímica e Cerâmicas, Departamento de Química, Universidade Federal de São Carlos, CEP 135665-905, CP 676, São Carlos, São Paulo, Brasil
*
a)hanay@df.ufscar.br
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Abstract

Aiming the understanding of how the application to devices is affected by the presence of oxygen in semiconductor nanostructures, Al/Ge-nanowires Schottky devices were fabricated without any previous treatment to remove the native oxide from nanowires' surface, originated during the growth process. Electronic transport properties of these devices were investigated and it was observed that interface states originated from the disordered oxide layer effectively pinned the Fermi level at the Ge surface, affecting Schottky barriers. Numerical calculations were made to complement this study agreeing with experiments.

Keywords

Genanostructureelectrical properties
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1510: Symposium DD – Group IV Semiconductor Nanostructures and Applications , 2013 , mrsf12-1510-dd05-18
Copyright
Copyright © Materials Research Society 2013

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