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Surface Reaction Mechanisms in the Metallisation and Etching of Semiconductor Materials.

  • A Wee (a1), A J Murrell (a1), C L French (a1), R J Price (a1), R B Jackman (a1) and J S Foord (a1)...

Abstract

Surface spectroscopic techniques have been used to investigate aluminium deposition form tri-methyl aluminium (TMA) on Si(100), and the etching of InP by chlorine. Thermal reactions and processes stimulated by UV lamps and ion beams are examined. The results are interpreted in the light of the adsorption states which are formed and the surface transformations of chemical states which are observed to occur.

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Surface Reaction Mechanisms in the Metallisation and Etching of Semiconductor Materials.

  • A Wee (a1), A J Murrell (a1), C L French (a1), R J Price (a1), R B Jackman (a1) and J S Foord (a1)...

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