Skip to main content Accessibility help

Surface Preparation and Growth Condition Dependence of Cubic GaN Layer on (001) GaAs by Hydride Vapor Phase Epitaxy

  • H. Tsuchiya (a1), K. Sunaba (a1), S. Yonemura (a1), T. Suemasu (a1) and F. Hasegawa (a1)...


GaN buffer layers and thick GaN layers were grown on (001) GaAs substrates by hydride vapor phase epitaxy. The ratio of cubic to hexagonal components in the grown layer was estimated from the ratio of the integrated X-ray diffraction intensities of the cubic (002) plane and hexagonal (1011) planes measured by w scan. The optimum growth conditions were thermal cleaning at 600°C, growth temperature of 500°C and thickness of 30 nm for the buffer layer, and the Will ratio of 300 for thick GaN growth at 800°C. Cubic component in the layer grown with those conditions was more than 85% and strong cubic photoluminescence emission was observed at 377 nm (3.28 eV).



Hide All
1. Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H. and Sugimoto, Y., Japan. J. Appl. Phys., 35, L74 (1996).
2. Kahn, M.A., Shur, M.S., Kuznia, J.N., Chen, Q., Burn, J. and Schaff, W., Appl. phys. Lett., 66, 1083 (1995).
3. Mizuta, M., Fujieda, S., Matsumoto, Y. and Kawamura, T., Japan. J. Appl. Phys., 25, L945 (1986).
4. Tsuchiya, H., Sunaba, K., Yonemura, S., Suemasu, T. and Hasegawa, F., Japan. J. Appl. Phys., 36, LI (1997).
5. Lei, T., Fancilli, M., Monar, R.J., Moustakas, T.D., Graham, R.J. and Scanlon, J., Appl. phys. Lett., 59, 944 (1991).
6. Brandt, O., Yang, H., Jenichen, B., Suzuki, Y., Daweritz, L. and Ploog, K.H., Phys. Rev. B, 52, R2253 (1995).
7. Yamaguchi, A.A., Manako, T., Sakai, A., Sunakawa, H., Kimura, A., Nido, M. and Usui, A., Japan. J. Appl. Phys., 35, L873 (1996).
8. Nakadaira, A. and Tanaka, H., Proc. Int. Symp. Blue laser & Light Emitting Diodes, Chiba, Japan 1996 (Ohmsha Ltd., Tokyo, 1996) pp. 90.
9. Tietjen, J.J. and Amick, J.A., J. Electrochem. Soc, 133, 724 (1966).
10. Hiramatsu, K., Detchprohm, T. and Akasaki, I., Japan. J. Appl. Phys., 32, 1528 (1993).
11. Miura, Y., Takahashi, N., Koukitu, A. and Seki, H., Japan. J. Appl. Phys., 35, 546 (1996).
12. Kuwano, N., Nagatomo, Y., Kobayashi, K., Oki, K., Miyoshi, S., Yaguchi, H., Onabe, K. and Shiraki, Y., Japan. J. Appl. Phys., 33, 18 (1994).
13. Sato, M., J. Appl. Phys., 78, 2123 (1995).
14. Okumura, H., Yoshida, S. and Okahisa, T., Appl. phys. Lett., 64, 2997 (1994).


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed