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Surface Of Li-Doped ZnSe Grown On Misoriented GaAs(001) Substrates

Published online by Cambridge University Press:  15 February 2011

Minoru Yoneta
Affiliation:
Department of Applied Physics, Okayama University of Science, Ridai-cho 1-1, Okayama 700, Japan
Masakazu Ohishi
Affiliation:
Department of Applied Physics, Okayama University of Science, Ridai-cho 1-1, Okayama 700, Japan
Hiroshi Saito
Affiliation:
Department of Applied Physics, Okayama University of Science, Ridai-cho 1-1, Okayama 700, Japan
Mitsuhiro Ohura
Affiliation:
Department of Applied Physics, Okayama University of Science, Ridai-cho 1-1, Okayama 700, Japan
Katsumoto Fujii
Affiliation:
Department of Applied Physics, Okayama University of Science, Ridai-cho 1-1, Okayama 700, Japan
Yoshihiko Hioe
Affiliation:
Department of Applied Physics, Okayama University of Science, Ridai-cho 1-1, Okayama 700, Japan
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Abstract

The surface of Li-doped ZnSe grown on misoriented GaAs(001) substrates by molecular beam epitaxy is studied by means of reflection high energy electron diffraction. Sharp and curved streaky RHEED patterns are observed for all the layers grown on the misoriented substrate towards [110], irrespective of off-angles. No curved pattern, however, is observed on ZnSe layers grown on misoriented GaAs(001) towards [110] with off-angle larger than 5°. We confirmed that the Li-array is surely formed along [110], and that the length of the Li-array is longer than 32Å to be observable as curved streaks. It is also confirmed that the growth rate of Li-doped ZnSe is proportional to the step density, and that the growth rate on the misoriented substrate towards [110] is higher than that on the misoriented substrate towards [110]. The photoluminescence spectra of Li-doped ZnSe layers grown on misoriented GaAs are reported.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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