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Surface Morphology of Ultrathin Oxide Formed on Si(100)

Published online by Cambridge University Press:  10 February 2011

T. Hattori ,
M. Fujimura  and
H. Nohira
T. Hattori
Affiliation:
Department of Electrical and Electronic Engineering, Musashi Institute of Technology, Tamazutsumi, Setagaya-ku, Tokyo 158-8557, Japan, hattori@ipc.musashi-tech.ac.jp
M. Fujimura
Affiliation:
Department of Electrical and Electronic Engineering, Musashi Institute of Technology, Tamazutsumi, Setagaya-ku, Tokyo 158-8557, Japan, hattori@ipc.musashi-tech.ac.jp
H. Nohira
Affiliation:
Department of Electrical and Electronic Engineering, Musashi Institute of Technology, Tamazutsumi, Setagaya-ku, Tokyo 158-8557, Japan, hattori@ipc.musashi-tech.ac.jp
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Abstract

The atomic-scale surface roughness of ultrathin thermal oxides formed on Si(100) were studied as a function of oxide film thickness up to the thickness of 2.0 nm. The height deviation on oxide surface is limited within single atomic-step height of 0.135 nm on Si(100) surface below the oxide film thickness of about 1 nm, but above this thickness the height deviation increases with the increase in thickness at 700°C. This increase in height deviation with thickness must be produced by the relaxation of oxidation–induced stress in bulk SiO2. Furthermore, the oscillation in surface roughness with constant amplitude and its oscillating period in oxide film thickness of 0.19 nm were found.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 567: Symposium R – Ultrathin SiO2 and Higg-K Materials for ULSI Gate Dielectrics , 1999 , 163
Copyright
Copyright © Materials Research Society 1999

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References

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