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Surface Morphology of Nanoscale TiSi2 Epitaxial Islands on Si(00l)

Published online by Cambridge University Press:  03 September 2012

Woochul Yang ,
F.J. Jedema ,
H. Ade  and
R.J Nemanich
Woochul Yang
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202.
F.J. Jedema
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202.
H. Ade
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202.
R.J Nemanich
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202.
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Abstract

The morphologies of nanoscale epitaxial islands of TISi2 are studied. The islands are prepared by deposition of ultrathin Ti (3-20Å) on both smooth and roughened.Si(001) substrates. The island formation is initiated by annealing to 800-1000°C. The roughened substrates are prepared by etching with atomic H produced in a plasma. The morphologies of the substrate before and after island formation are examined by atomic force microscopy (AFM). In particular, the influence of surface-roughness on both the formation of islands and the size distribution of islands is investigated. On a rough substrate islands with a lateral dimension of ~350Å and a vertical dimension of ~25Å were observed with size uniformity of ~20%. Also it was observed that the roughness of the surface reduced the island size and affected the island distribution. The results are discussed in terms of surface energy and the strain field around the islands.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 448: Symposium M – Control of Semiconductor Surfaces and Interfaces , 1996 , 223
Copyright
Copyright © Materials Research Society 1997

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