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Surface Morphology of Diamond Thin Films Using Photoinduced Scanning Tunneling Microscopy

Published online by Cambridge University Press:  21 February 2011

D.L. Carroll
Affiliation:
Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia Pa
T. Mercer
Affiliation:
Department of Physics, Drexel University, Philadelphia Pa, 19104
Y. Liang
Affiliation:
Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia Pa
N.J. Dinardo
Affiliation:
Department of Physics, Drexel University, Philadelphia Pa, 19104
D. A. Bonnell
Affiliation:
Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia Pa
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Abstract

Photo-induced conduction in thin insulating films of diamond was used to obtain STM images indicative of film morphology. UV light was used to generate carriers in the conduction band of diamond films grown on Si (111). Tunneling currents could only be established when the tunnel junction was illuminated. Without the light, no current was measured even with the tip in contact with the surface. Two types of films were studied. A CVD grown diamond film with nitrogen impurities and a diamond-like film grown by laser ablation of graphite. Topological detail was compared to that obtained with an AFM. The correspondence between AFM and photoinduced STM images suggests that the STM images are indicative of film morphology.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

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