Hostname: page-component-76fb5796d-2lccl Total loading time: 0 Render date: 2024-04-26T18:07:41.138Z Has data issue: false hasContentIssue false
  • English
  • Français

Surface Modification of Sic by Ion Implantation

Published online by Cambridge University Press:  28 February 2011

Susan Wood ,
J. A. Spitznagel ,
W. J. Choyke ,
J. Bradshaw ,
J. Greggi Jr.  and
N. J. Doyle
Susan Wood
Affiliation:
Westinghouse R&D Center, 1310 Beulah Road, Pittsburgh, PA 15235
J. A. Spitznagel
Affiliation:
Westinghouse R&D Center and University of Pittsburgh
W. J. Choyke
Affiliation:
Westinghouse R&D Center and University of Pittsburgh
J. Bradshaw
Affiliation:
University of Pittsburgh, Pittsburgh, PA 15260
J. Greggi Jr.
Affiliation:
Westinghouse R&D Center, 1310 Beulah Road, Pittsburgh, PA 15235
N. J. Doyle
Affiliation:
Westinghouse R&D Center, 1310 Beulah Road, Pittsburgh, PA 15235
Get access

Abstract

Predominantly 6H <0001> SiC single crystals have been implanted with nitrogen and aluminum at 300°K. The effects of implantation and post-implantation annealing at 573–1173°K have been characterized by Rutherford backscattering/channeling, microhardness measurements and transmission electron microscopy. Even at 1173°K, defect annealing was inhibited in amorphized regions. Progressive damage recovery as the anneal temperature was increased was otherwise generally observed. Fluences predicted by the critical damage energy of 2 × 1021 keV/cm3 did not quite produce amorphization to x = 0. In the as-implanted specimens, decreasing hardness was observed with increasing fluence. Significant surface softening (∼ 33% hardness reduction) was achieved at the highest aluminum fluence (5 × 1015 Al/cm2) and was stable at temperatures < 893°K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 60: Symposium L – Defect Properties and Processing of High-Technology Nonmetallic Materials , 1985 , 459
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Marshall, D. B. and Evans, A. G., Annual Report to ONR, Contract N00014-8J-K-0362, January 1, 1984-Decemher 31, 1984.Google Scholar
2. Burnett, P. J. and Page, T. F., J. Mat. Sci. 19, 845 (1984).Google Scholar
3. Roberts, S. G. and Page, T. F., Ion Implantation into Metals, edited by Ashworth, V., Grant, W. A. and Porter, R. M. (Pergamon, Oxford, 1982), p. 135.Google Scholar
4. Burnett, P. J. and Page, T. F., Proc. Brit. Cer. Soc, 34, (1984).Google Scholar
5. Burnett, P. J. and Page, T. F., J. Mat. Sci, 19, 3524 (1984).CrossRefGoogle Scholar
6. Choyke, W. J., Inst. Phys. Conf. Ser., No. 31 (1977). p. 58.Google Scholar
7. Spitznagel, J. A., Wood, Susan, Choyke, W. J., Doyle, N. J., Bradshaw, J. and Fishman, S. G., to be published in J. Nucl. Instr. and Meth. (1986).Google Scholar
8. Wood, Susan, Greggi, J. Jr., Spitznagel, J. A., Doyle, N. J., Irwin, R. B., Townsend, J. R. and Choyke, W. J., Inst. Phys. Conf. Ser. No. 67 (1983) p. 247.Google Scholar
9. Carter, C. H. Jr., Edmond, J. A., Palmour, J. W., Ryu, J., Kim, H. J. and Davis, R. F., Mat. Res. Soc. Symp. Proc., Vol. 46 (1985) p. 593.Google Scholar
10. Wood, S., Greggi, J. Jr., Choyke, W. J., Spitznagel, J. A., Doyle, N. J. and Irwin, R. R., Inst. Phys. Conf. Ser. No. 76 (1985) p. 139.Google Scholar