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Surface Investigations on Single Crystal Anatase TiO2

Published online by Cambridge University Press:  10 February 2011

R. Hengerer ,
L. Kavan ,
B. Bolliger ,
M. Erbudak  and
M. Gr Tzel
R. Hengerer
Affiliation:
Laboratory of Photonics and Interfaces, Swiss Federal Institute of Technology, CH-1015 Lausanne
L. Kavan
Affiliation:
J. Heyrovsky Institute of Physical Chemistry, Academy of Sciences of the Czech Republic, CZ-18223 Prague
B. Bolliger
Affiliation:
Laboratory of solid state physics, Swiss Federal Institute of Technology, CH-8093 Z rich
M. Erbudak
Affiliation:
Laboratory of solid state physics, Swiss Federal Institute of Technology, CH-8093 Z rich
M. Gr Tzel
Affiliation:
Laboratory of Photonics and Interfaces, Swiss Federal Institute of Technology, CH-1015 Lausanne
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Abstract

Utilizing a chemical transport reaction, we succeeded in growing large and clean anatase TiO2 single crystals whose surfaces could be characterized by standard physical and electro-chemical techniques. The examination of the structure of the clean (101) and (001) faces by low energy electron diffraction (LEED) and secondary electron imaging (SEI) showed that these surfaces are bulk terminated and thermodynamically stable. Impedance spectroscopy in aqueous solution revealed a slight difference in the flatband potential between the (101) and the (001) faces. This shift is also manifested in a different photocurrent onset potential and can be rationalized by a different water adsorption on the two surface structures. Voltammetry in aprotic solutions showed a different lithium insertion behavior for the two surfaces. This is explained by a different structural transparency of the anatase lattice in the two directions. Both findings favor the (001) over the (101) surface. These orientational dependencies may have some important technological relevance for the mesoscopic TiO2 films used in solar cells and lithium batteries.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 623: Symposium U – Materials Science of Novel Oxide-Based Electronics , 2000 , 43
Copyright
Copyright © Materials Research Society 2000

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