Hostname: page-component-848d4c4894-2xdlg Total loading time: 0 Render date: 2024-06-19T18:41:54.593Z Has data issue: false hasContentIssue false
  • English
  • Français

Surface Electronic States of Low Temperature H-plasma Cleaned Si(100) and Ge(100) Surfaces

Published online by Cambridge University Press:  25 February 2011

Jaewon Cho ,
T.P. Schneider  and
R.J. Nemanich
Jaewon Cho
Affiliation:
Department of Physics, North Carolina State University, Raleigh, N.C. 27695-8202
T.P. Schneider
Affiliation:
Department of Physics, North Carolina State University, Raleigh, N.C. 27695-8202
R.J. Nemanich
Affiliation:
Department of Physics, North Carolina State University, Raleigh, N.C. 27695-8202
Get access

Abstract

The surfaces of Si(100) and Ge(100), cleaned at low temperatures by H-plasma, were studied by Angle Resolved UV-Photoemission Spectroscopy(ARUPS). In the case of Si(100), H-plasma exposure produced ordered H-terminated crystallographic structures with either a 2×1 or 1×1 LEED pattern while for Ge(100) a weak H-terminated 2x1 pattern was obtained. The hydride phases, found on the surfaces of the cleaned Si(100), were shown to depend on the temperature of the surface during H-plasma cleaning. The electronic states for the monohydride and dihydride phases were identified by ARUPS. When the plasma cleaned surface was annealed, the phase transition from the dihydride to monohydride was observed. For the Ge(100) surface, an ordered 2x1 monohydride phase was obtained from the surface cleaned at 180°C. After plasma exposure at ≤170°C a 1×1 surface was observed, but the ARUPS indicated that the surface was predominantly composed of disordered monohydride structures. After annealing above the H-dissociation temperatures, the dangling bond surface states were identified for both Si and Ge. The Si(100) and Ge(100) ARUPS spectra shifted after annealing, indicating that the H-terminated surfaces were unpinned.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 237
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Rudder, R.A., Fountain, G.G., and Markunas, R.J., J. Appl. Phys. 60, 3519 (1986)CrossRefGoogle Scholar
2. Schneider, T.P., Cho, J., VanderWeide, J., Wells, S.E., Lucovsky, G., and Nemanich, R.J., Mantini, M.J., Rudder, R.A., and Markunas, R.J., Mat. Res. Soc. Symp. Proc. 204, 333 (1991)CrossRefGoogle Scholar
3. Anthony, B., Breaux, L., Hsu, T., Banerjee, S., and Tasch, A., J. Vac. Sci. Technol. B7, 621 (1989)CrossRefGoogle Scholar
4. Maruno, S., Iwasaki, H., Horioka, K., Li, S.T., and Nakamura, S., Jpn. J. Appl. Phys. 21, L263 (1982)CrossRefGoogle Scholar
5. Cho, J., Schneider, T.P., VanderWeide, J., Jeon, H., and Nemanich, R.J., Appl. Phys. Lett. 59, 1995 (1991)CrossRefGoogle Scholar
6. Cho, J., Schneider, T.P., and Nemanich, R.J., to be publishedGoogle Scholar
7. Stucki, F., Schaefer, J.A., Anderson, J.R., Lapeyre, G.J., and Gopel, W., Solid St. Commun. 47, 795 (1983)CrossRefGoogle Scholar
8. Chabal, Y.J., and Raghavachari, K., Phys. Rev. Lett. 54, 1055 (1985)CrossRefGoogle Scholar
9. Maruno, S., Iwasaki, H., Horioka, K., Li, S.T., and Nakamura, S., Phys. Rev. B 4110 (1983)CrossRefGoogle Scholar
10. Boland, J.J., Phys. Rev. Lett. 65, 3325 (1990)CrossRefGoogle Scholar
11. Appelbaum, J.A., Baraff, G.A., Hamann, D.R., Hagstrum, H.D., and Sakurai, T., Surf. Sci. 70, 654 (1978)CrossRefGoogle Scholar
12. Papagno, L., Shen, X.Y., Anderson, J., Spagnolo, G.S., and Lapeyre, G.J., Phys. Rev. B34, 7188 (1986)CrossRefGoogle Scholar
13. Chabal, Y.J., Surf. Sci. 168, 594 (1986)CrossRefGoogle Scholar
14. Vig, J.R., J. Vac. Sci. Technol. A3, 1027 (1985)CrossRefGoogle Scholar
15. Fenner, D.B., Biegelsen, D.K., and Bringans, R.D., J. Appl. Phys. 66, 419 (1989)CrossRefGoogle Scholar
16. Hamers, R.J., Tromp, R.M., and Demuth, J.E., Phys. Rev. B34, 5343 (1986)CrossRefGoogle Scholar
17. Ciraci, S., Butz, R., Oellig, E.M., and Wagner, H., Phys. Rev. B30, 711 (1984)CrossRefGoogle Scholar
18. Ciraci, S., and Batra, I.P., Surf. Sci. 178, 80 (1986)CrossRefGoogle Scholar
19. Huang, L.J., and Lau, W.M., Appl. Phys. Lett. 60, 1108 (1992)CrossRefGoogle Scholar
20. Landemark, E., Uhrberg, R.I.G., Kruger, P., and Pollmann, J., Surf. Sci. Lett. 236, L359 (1990)CrossRefGoogle Scholar
21. Kubby, J.A., Griffith, J.E., Becker, R.S., and Vickers, J.S., Phys. Rev. B36, 6079 (1987)CrossRefGoogle Scholar
22. Hamza, A.V., Kubiak, G.D., and Stulen, R.H., Surf. Sci. 237, 35 (1990)CrossRefGoogle Scholar