Hostname: page-component-848d4c4894-2xdlg Total loading time: 0 Render date: 2024-07-01T17:59:54.529Z Has data issue: false hasContentIssue false
  • English
  • Français

Surface Disorder and Exfoliation in Lithographically Textured Molybdenum Disulfide

Published online by Cambridge University Press:  26 February 2011

C. B. Roxlo ,
H. W. Deckman ,
J. H. Dunsmuir ,
A. F. Ruppert  and
R. R. Chianelli
C. B. Roxlo
Affiliation:
Corporate Research Labs, Exxon Research and Engineering Company, Annandale, NJ 08801
H. W. Deckman
Affiliation:
Corporate Research Labs, Exxon Research and Engineering Company, Annandale, NJ 08801
J. H. Dunsmuir
Affiliation:
Corporate Research Labs, Exxon Research and Engineering Company, Annandale, NJ 08801
A. F. Ruppert
Affiliation:
Corporate Research Labs, Exxon Research and Engineering Company, Annandale, NJ 08801
R. R. Chianelli
Affiliation:
Corporate Research Labs, Exxon Research and Engineering Company, Annandale, NJ 08801
Get access

Abstract

Lithographic techniques have been used to prepare transmission electron microscopy samples of MoS2, allowing examination of the edge surface with single-layer resolution. We observe that these surfaces are easily disordered by chemical treatments common in the catalysis industry. In some cases treatment in H2/H2S leads to an exfoliation of the layered structure, a process which can be observed as it occurs in the microscope.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 82: Symposium I – Characterization of Defects in Materials , 1986 , 481
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Chianelli, R. R., in Surface Properties and Catalysis by Non-metals, Bonelle, J. P. et al., eds. (D. Reidel, Dordrecht, 1983).Google Scholar
2. Chianelli, R. R., Prestridge, E. B., Pecoraro, T. A. and Neufville, J. P. de, Science 203, 1107 (1979).CrossRefGoogle Scholar
3. Tauster, S. J., Pecoraro, T. A. and Chianelli, R. R., J. Catal. 63, 515 (1980).Google Scholar
4. Roxlo, C. B., Deckman, H. W., Gland, J., Cameron, S. D. and Chianelli, R. R. (to be published).Google Scholar
5. Deckman, H. W. and Dunsmuir, J. H., Appl. Phys. Lett. 41, 377 (1982).Google Scholar
6. Farias, M. H., Gellman, A. J., Somorjai, G. A., Chianelli, R. R. and Liang, K. S., Surf. Sci. 140, 181 (1984).Google Scholar
7. Mayer, J. W., Erikson, L. and Davies, J. A., Ion Implantation in Semiconductors, Academic Press, NY (1970).Google Scholar
8. Roxlo, C. B., Daage, M., Ruppert, A. F. and Chianelli, R. R., J. Catal. 100, 176 (1986).Google Scholar
9. Chianelli, R. R., Ruppert, A. F., Behal, S. K., Kear, B. H., Wold, A. and Kershaw, R., J. Catal. 92, 56 (1985).Google Scholar
10. Baker, R.T.K. and Sherwood, R. D., in Microbeam Analysis - 1986, Romig, A. D. and Chambers, W. F., Eds. (San Francisco Press, San Francisco, 1986), p. 317.Google Scholar
11. Murphy, D. W. and Hull, G. W., J. Chem. Phys. 62, 973 (1975).Google Scholar