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Surface Decomposition Kinetics of Organosilane Precursors to Silicon Carbide

Published online by Cambridge University Press:  22 February 2011

Bin Han ,
John B. Hudson  and
Leonard V. Interrante
Bin Han
Affiliation:
Materials Engineering Department, Rensselaer Polytechnic Institute, Troy, NY 12180
John B. Hudson
Affiliation:
Materials Engineering Department, Rensselaer Polytechnic Institute, Troy, NY 12180
Leonard V. Interrante
Affiliation:
Chemistry Department, Rensselaer Polytechnic Institute, Troy, NY 12180
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Abstract

Reactive molecular beam scattering techniques with mass spectrometric detection have been used to characterize the kinetics and mechanism of the decomposition of two 1,3-disilacyclobutane precursors to SiC on the Si(100) surface to yield SiC and gas-phase byproducts. Both compounds adsorb and desorb without dissociation at ambient temperature. Reaction probability increases with increasing surface temperature to a maximum exceeding 0.8 at 1100 K. Both compounds yield large quantities of gas-phase intermediates, while only one produces a significant yield of SiC in the initial collision. In situ and ex situ analysis of the SiC film indicate that it is stoichiometric SiC. A combination of mass spectrometric detection with time of flight analysis of surface reaction products permits formulation of a reaction scheme involving a multistep surface decomposition sequence.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 457
Copyright
Copyright © Materials Research Society 1993

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References

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