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Surface Condition in the Plasma-CVD of a-Si:H,F from SiF4 and H2

Published online by Cambridge University Press:  25 February 2011

A. Maruyama ,
D. S. Shen ,
V. Chu ,
J. Z. Liu ,
J. Jaroker ,
I. Campbell ,
P. M. Fauchet  and
S. Wagner
A. Maruyama
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, N.J. 08544
D. S. Shen
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, N.J. 08544
V. Chu
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, N.J. 08544
J. Z. Liu
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, N.J. 08544
J. Jaroker
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, N.J. 08544
I. Campbell
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, N.J. 08544
P. M. Fauchet
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, N.J. 08544
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, N.J. 08544
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Abstract

We present a detailed study of the growth of a-Si:H,F from SiF4 and H4. The growth surface appears to have a high density of surface states. These surface states can be thermally relaxed by keeping the films at growth temperature after the termination of growth, suggesting that the states were created during film growth. When frozen in, the surface state density is found to depend on the conditions during film growth. The density is related to the sharpness of the valence band tail as measured by the Urbach Energy. We believe that a reaction on the growth surface resulting in fluorine elimination creates these surface states and also affects the formation of the Si-network.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 131: Symposium E – Chemical Perspectives of Microelectronic Materials I , 1988 , 203
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

[1] Ovshinsky, S. and Madan, A., Nature, 276, 482 (1978)Google Scholar
[2] Nozawa, K., Yamaguchi, Y., Hanna, J. and Shimizu, I., J. Non-Cryst. Solids, 59&60 533 (1983).Google Scholar
[3] Chu, V., Conde, J.P., Shen, D.S. and Wagner, S., in Conference Record of the International Topical Conference on Hydrogenated Amorphous Silicon Devices and Technology, edited by Jerzy, Kanicki, Nov.21–23 1988, Yorktown Heights, N.Y., p. 119 Google Scholar
[4] Hanna, J., Shibata, N., Fukuda, K., Ohtoshi, H., Oda, S., and Shimizu, I., in Disordered Semicondutors, (Plenum, New York,1987), p.435.CrossRefGoogle Scholar
[5] Nishida, S., Shiimoto, T., Yamada, A., Karasawa, S., Konagai, M. and Takahashi, K., Appl.Phys.Lett. 49, 79 (1986).Google Scholar
[6] Schwarz, R., Okada, S., Chou, S.F., Kolodzey, J., Slobodin, D. and Wagner, S., in Materials Issues in Amorphous Silicon Technology, edited by Adler, D., Madan, A., and Thompson, M.J. (Mater. Res. Soc. Proc. 70, Pittburgh, PA 1985), pp. 283–288.Google Scholar
[7] Slobodin, D., Aljishi, S., Schwarz, R., and Wagner, S., in Materials Issues in Applications of Amorphous Silicon Technology, edited by Adler, D., Madan, A., and Thompson, M.J. (Mater. Res. Soc. Proc. 48, Pittburgh, PA 1985), pp.153–158.Google Scholar
[8] Maruyama, A., Shen, D.S., Chu, V., Liu, J.Z., and Wagner, S., to be publishedGoogle Scholar
[9] Singer, P.H., Semiconductor International 11, 68 (1988).Google Scholar
[10] Smith, Z E., Chu, V., Shepard, K., Aljishi, S., Slobodin, D., Kolodzey, J., Chu, T.L., and Wagner, S., Appl. Phys. Lett. 50, 1521 (1987).Google Scholar