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Surface Characterization of Cu(In, Ga)Se2 Thin Films Treated by Various Solutions

Published online by Cambridge University Press:  10 February 2011

T. Wada ,
Y. Hashimoto ,
K. Kusao ,
N. Kohara ,
T. Negami  and
M. Nishitani
T. Wada
Affiliation:
Central Research Laboratories, Matsushita Electric Ind. Co., Ltd., 3-4 Hikaridai, Seika-cho, Soraku-gun, Kyoto 619-02, Japan
Y. Hashimoto
Affiliation:
Central Research Laboratories, Matsushita Electric Ind. Co., Ltd., 3-4 Hikaridai, Seika-cho, Soraku-gun, Kyoto 619-02, Japan
K. Kusao
Affiliation:
Central Research Laboratories, Matsushita Electric Ind. Co., Ltd., 3-4 Hikaridai, Seika-cho, Soraku-gun, Kyoto 619-02, Japan
N. Kohara
Affiliation:
Central Research Laboratories, Matsushita Electric Ind. Co., Ltd., 3-4 Hikaridai, Seika-cho, Soraku-gun, Kyoto 619-02, Japan
T. Negami
Affiliation:
Central Research Laboratories, Matsushita Electric Ind. Co., Ltd., 3-4 Hikaridai, Seika-cho, Soraku-gun, Kyoto 619-02, Japan
M. Nishitani
Affiliation:
Central Research Laboratories, Matsushita Electric Ind. Co., Ltd., 3-4 Hikaridai, Seika-cho, Soraku-gun, Kyoto 619-02, Japan
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Abstract

Cu-rich Cu(In, Ga)Se2 (CIGS) films were investigated by scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive x-ray fluorescence spectroscopy (EDX) and x-ray photoelectron spectroscopy (XPS). The Cu-rich CIGS film were treated in KCN and NH3 solutions. In the as-deposited Cu-rich CIGS film, the cation ratio of Cu/(In+Ga) at the surface exceeded the bulk value. Cross-sectional TEM of the KCN-treated film suggested that Cu2-xSe existed both at the grain boundaries and on the grains near the surface of the Cu-rich CIGS film. The Cu2-xSe was completely removed by the treatment in the KCN solution and was removed only at the front surface by treatment in the NH3 solution.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 426: Symposium J – Thin Films for Photovoltaic and Related Device , 1996 , 291
Copyright
Copyright © Materials Research Society 1996

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