Skip to main content Accessibility help
×
Home

Surface and Interface Properties of InSb Epitaxial Thin Films Grown on Gaas by Low Pressure Metalorganic Chemical Vapor Deposition

  • K. Li (a1), K. L. Tan (a2), M. Pelczynski (a3), Z. C. Fenge (a3), A. T. S. Wee (a2), J. Y. Lin (a2), I. Ferguson (a3) and R. A. Stall (a3)...

Abstract

There is increasing interest in the epitaxial growth of high quality InSb thin films on GaAs substrates for many device applications such as infrared optoelectronics. The large lattice mismatch (14.6%) between InSb and GaAs has meant that both growth techniques and conditions have a large influence on the interface properties and consequently the film quality. A surface science study, by X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) together with Nomarski microscopy, on the surface and interface properties of InSb/GaAs by metalorganic chemical vapor deposition is presented. It is found fromthe XPS data that the ambient surface is composed of InSb, In2O3, Sb2O3 and Sb2O5. The interdiffusion phenomena are studied by AES depth profiling; the width of interdiffusion region is determined to be 50±10 nm for all the samples grown at different V/III ratios. This is narrower than the data previously obtained for InSb/GaAs interfaces produced by metalorganic magnetron sputtering. The results also demonstrate that uniform and stoichiometric InSb films have been obtained, and that the reproducibility of the MOCVD technique is excellent.

Copyright

References

Hide All
1. Partin, D.L., Heremans, J. and Thrush, C.M., J. Appl. Phys. 71 2328 (1992).
2. Kitabatake, M., Kawasaki, T. and Korechika, T., Thin Solid Films 281–282, 17 (1996).
3. Mori, M., Tsubosaki, Y., Tambo, T., Ueba, H. and Tatsuyama, C., Appl. Surf. Sci. 117–118, 512 (1997).
4. Liu, W. K., Winesett, J., Ma, W., Zhang, X., Santos, M. B., Fang, X. F. and McCann, P. J., J. Appl. Phys. 81, 1708 (1997).
1. Michel, E., Xu, J., Kim, J. D., Ferguson, I. and Razeghi, M., IEEE Photonics Technol. Lett. 8, 673 (1996).
2. Michel, E., Kim, J. D., Javadpour, S., Xu, J., Ferguson, I. and Razeghi, M., Appl. Phys. Lett. 69, 215 (1996).
5. Woelk, E., Jürgensen, H., Rolph, R. and Zielinski, T., J. Electron. Mat. 24, 1715 (1995).
6. Miyazaki, T., Kunugi, M., Kitamura, Y. and Adachi, S., Thin Solid Films 287, 51 (1996).
7. Okimura, H., Koizumi, Y. and Kaida, S., Thin Solid Films 254, 169 (1995).
8. Chyi, J.-I., Kalen, S., Kumar, N. S., Litton, C. W. and Morkoc, H., Appl. Phys. Lett. 53, 1092 (1988).
9. Gaskill, D. K., Stauf, G. T. and Bottka, N., Appl. Phys. Lett. 58, 1905 (1991).
10. Webb, J. B., Halpin, C. and Noad, J. P., J. Appl. Phys. 60, 2949 (1986).
11. Moulder, J.F., Stickle, W.F., Sobol, P.E. and Bomben, K.D., Handbook of X-ray photoelectror microscopy, edited by Chastain, J. (Perkin-Elmer Corporation, Physical Electronic Division USA, 1992).
12. Li, K., Wee, A. T. S., lin, J., Lee, K. K., Watt, F., Tan, K. L., Feng, Z. C. and Webb, J. B., Thil Solid Films 302, 111 (1997).

Surface and Interface Properties of InSb Epitaxial Thin Films Grown on Gaas by Low Pressure Metalorganic Chemical Vapor Deposition

  • K. Li (a1), K. L. Tan (a2), M. Pelczynski (a3), Z. C. Fenge (a3), A. T. S. Wee (a2), J. Y. Lin (a2), I. Ferguson (a3) and R. A. Stall (a3)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed