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Surface and Bulk Photoconductivity of Cd1−xMnxTe

  • H. Neff (a1), K. Y. Lay (a2), K. Park (a3) and K. J. Bachmann (a1) (a2)


Double beam photoconductivity experiments are reported for the system Cd1−xMnxTe. The technique allows a separation of surface and bulk contributions, respectively. Bulk effects dominate for manganese rich material and reveal a sharp peak at the band gap energy while surface conductivity reveals a step function type spectral behavior. The growth of a native oxide on the surface causes an increase in the surface recombination velocity and a change from surface to bulk conduction. An oxide related trap state was discovered that is located at approximately 400 meV above the valence band edge.



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Surface and Bulk Photoconductivity of Cd1−xMnxTe

  • H. Neff (a1), K. Y. Lay (a2), K. Park (a3) and K. J. Bachmann (a1) (a2)


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