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Supersonic-Free-Jet CVD Growth of Dy-doped Silicon Films for 1.3 Micron LED

  • Shinji Kawai (a1), Koji Matsutake (a1), Fumiya Watanabe (a1) and Teruaki Motooka (a1)


We have investigated epitaxial growth of dysprosium (Dy)-doped silicon (Si:Dy) thin films for fabrication of 1.3 μm light-emitting diodes (LEDs) using supersonic-free-jet CVD. The 700-nm-thick Si:Dy films are grown on p+-type, p-type, and n-type Si(100) at a substrate temperature of 800° for 90 min. The doping concentrations of Dy atoms range from 1018 to 1019 cm-3 at the surface region of the film measured by the secondary ion mass spectrometry (SIMS). The particles with average size ~200 nm form at the surface of the film and it suggests the possibility to form Si-nanoparticle (Si quantum dots) from atomic force microscopy (AFM) observation. From the electrical measurements at room temperature, the metal (Al)-Si:Dy junction is a Schottky contact and Dy introduces donor states in Si.



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1. Polman, A., Snoeks, E., van den Hoven, G. N., Brongersma, M. L., Serna, R., Shin, J. H., Kik, P., and Radius, E., Nucl. Instrum. Methods Phys. Res. B 106, 393 (1995).
2. Polman, A., J. Appl. Phys. 82, 1 (1997).
3. Soref, R., MRS Bull. 23 (4), 20 (1998).
4. Fitzgerald, E. A., and Kimerling, L. C., MRS Bull. 23 (4), 39 (1998).
5. Kik, P. G., and Polman, A., MRS Bull. 23 (4), 48 (1998).
6. Ennen, H., Pomrenke, G., Axmann, A., Haydl, W., and Schneider, J., Appl. Phys. Lett. 46, 381 (1985).
7. Franze, G., Priolo, F., Coffa, S., Polman, A., and Carnera, A., Appl. Phys. Lett. 64, 2235 (1994).
8. Zheng, B., Michel, J., Ren, F. Y. G., Kimerling, L. C., Jacobson, D. C., and Poate, J. M., Appl. Phys. Lett. 64, 2842 (1994).
9. Hewak, D. W., Samson, B. N., Medeiros Neto, J. A., Laming, R. I., and Payne, D. N., Electron. Lett. 30, 968 (1994).
10. Samson, B. N., Medeiros Neto, J. A., Laming, R. I., and Payne, D. N., Electron. Lett. 30, 1617 (1994).
11. Wei, K., Machewirth, D. P., Wenzel, J., Snitzer, E., and Sigel, G. H. Jr, Opt. Lett. 19, 904 (1994).
12. Tanabe, S., Hanada, T., Watanabe, M., Hayashi, T., and Soga, N., J. Am. Ceram. Soc. 78, 2917 (1995).
13. Page, R. H., Schaffers, K. I., Payne, S. A., and Krupke, W. F., Wavelight, J. Technol. 15, 786 (1997).
14. Motooka, T., Abe, H., Fons, P., and Tokuyama, T., Appl. Phys. Lett. 63, 3473 (1993).
15. Pietsch, W., Aramaki, T., and Motooka, T., Jpn. J. Appl. Phys., Part1 35, 6566 (1996).
16. Ikoma, Y., Endo, T., Watanabe, F., and Motooka, T., J. Vac. Sci. Technol. A 16, 763 (1998).
17. Ikoma, Y., Endo, T., Watanabe, F., and Motooka, T., Appl. Phys. Lett. 75, 3977 (1999).
18. Watanabe, F., Ohmura, K., Kawai, S., and Motooka, T., J. Cryst. Growth 222, 1 (2001).


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