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Supersonic-Free-Jet CVD Growth of Dy-doped Silicon Films for 1.3 Micron LED

  • Shinji Kawai (a1), Koji Matsutake (a1), Fumiya Watanabe (a1) and Teruaki Motooka (a1)

Abstract

We have investigated epitaxial growth of dysprosium (Dy)-doped silicon (Si:Dy) thin films for fabrication of 1.3 μm light-emitting diodes (LEDs) using supersonic-free-jet CVD. The 700-nm-thick Si:Dy films are grown on p+-type, p-type, and n-type Si(100) at a substrate temperature of 800° for 90 min. The doping concentrations of Dy atoms range from 1018 to 1019 cm-3 at the surface region of the film measured by the secondary ion mass spectrometry (SIMS). The particles with average size ~200 nm form at the surface of the film and it suggests the possibility to form Si-nanoparticle (Si quantum dots) from atomic force microscopy (AFM) observation. From the electrical measurements at room temperature, the metal (Al)-Si:Dy junction is a Schottky contact and Dy introduces donor states in Si.

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