Hostname: page-component-8448b6f56d-qsmjn Total loading time: 0 Render date: 2024-04-20T00:05:57.718Z Has data issue: false hasContentIssue false
  • English
  • Français

Supersaturated P-Type Polycrystaline Films Produced by Rapid Thermal Annealing of High Dose Boron Ion Implants for Interconnects and Shallow Junction Diffusion Sources

Published online by Cambridge University Press:  21 February 2011

B. Raicu ,
M.I. Current ,
W.A. Keenan ,
D. Mordo ,
R. Brennan  and
R. Holzworth
B. Raicu
Affiliation:
Integrated Technology Association,1033 Crestview Dr., Mt.View, CA 94040;
M.I. Current
Affiliation:
Applied Materials, 3050 Bowers Ave., Santa Clara, CA 95054;
W.A. Keenan
Affiliation:
Prometrix Corp., 3255 Scott Blvd., Santa Clara, CA 95054;
D. Mordo
Affiliation:
AG Associates, 1325 Borregas Ave. Sunnyvale, CA 94089;
R. Brennan
Affiliation:
Solecon Lab, 2241 Paragon Dr., San Jose, CA 95131;
R. Holzworth
Affiliation:
Advanced Micro Devices, 901 Thompson P1., Sunnyvale, CA 94088;
Get access

Abstract

Highly conductive p+-polysilicon films were fabricated over Si(100) and SiO2 surfaces using high-dose ion implantation and rapid thermal annealing. Resistivities close to that of single crystal silicon were achieved. These films were characterized by a variety of electrical and optical techniques as well as SIMS and cross-section TEM.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 182: Symposium C – Polysilicon Thin Films and Interfaces , 1990 , 153
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Raicu, B., U.S. Patent #4,561,907, Dec 31, 1985; B.Raicu, in Ion Imvlantation Eouipment and TechniQues, H. Ryssel and H. Glawischnig, eds., Springer (1983) 450-457; B. Raicu, L.A. Christel, K.-G. Huang, S. Hasimoto, W.M. Gibson and I. Ward, Mat. Res. Soc. Proc. 106 (1988) 267-272.Google Scholar
2. Park, H.K., Boyer, K., Clawson, C., Eiden, G., Tang, A., Yamaguchi, T. and Sachitano, J., IEEE Elec. Dev. Let. EDL-7 (1986)658–660.Google Scholar
3. Hu, G.J. and Bruce, R.H., IEEE Trans. on Elec. Dev. ED-32 (1985) 584–588.Google Scholar
4. Moller, H.J. and Podbielski, R., Proc. of 13th Inter. Conf. on Defects in Semiconductors, Kimerling, L.C. and Parsey, J.M., Eds., Metallurgical Society of AIME (1984) 435–441.Google Scholar
5. Keenan, W.A., Johnson, W.H. and Smith, A.K., in Emerging Semiconductor Technolog, Gupta, D.C. and Langer, P.H., eds. ASTM STD 960 (1986) 598–614.Google Scholar
6. Pham, H.V., Damar, H., Mallory, C.L. and Perloff, D.S., Microelectronic Manufacturing and Testing, 10(1) (March,1987) 8–11.Google Scholar
7. Wauk, M.T. and Giles, A.D., Nuc. Inst. Meth. B37(1989)442–447.Google Scholar
8. Baker, F.K., Pfiester, J.F., Mele, T.C., Tseng, H.-H., Tobin, P.J., Hayden, J.D., Gunderson, C.D., Parrillo, L.C., IEDM-89 (1989) 443–446 Google Scholar
9. Sung, J.M., Lu, C.Y., Chen, M.L., Hillenius, S.J., Lindenberger, W.S., Manchanda, L., Smith, T.S. and Wang, S.J., IEDM-89 (1989) 447–450.Google Scholar
10. Sitaram, A.R., Muraka, S.P. and Sheng, T.T., J. Mat. Res. 5 (1990) 360–364.10.1557/JMR.1990.0360Google Scholar