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Superior Structural Quality of Newly Developed GaN Pendeo-Epitaxial Layers.

  • Z. Liliental-Weber (a1), J. Jasinski (a1), D. Cherns (a2), M. Baines (a2) and R. Davis (a3)...

Abstract

Transmission electron microscopy of plan-view and cross-section samples of pendeo-epitaxial layers is described. Samples grown with and without silicon nitride masks are compared. A large misorientation of the GaN grown above the mask was observed, with 2-3° tilt between wing and seed areas, caused by additional nucleation on the mask layer. Some misorientation was also observed between wing/wing areas of the sample. Samples grown without silicon nitride masks show much smaller misorientations and contain different types of defects.

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Superior Structural Quality of Newly Developed GaN Pendeo-Epitaxial Layers.

  • Z. Liliental-Weber (a1), J. Jasinski (a1), D. Cherns (a2), M. Baines (a2) and R. Davis (a3)...

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