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Substrate Latent Heat Effects in The Calculations for Pulsed Laser Irradiated Thin Films

Published online by Cambridge University Press:  15 February 2011

J.J. Cao ,
K. Rose ,
O. Aina ,
W. Katz  and
J. Norton
J.J. Cao
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12181
K. Rose
Affiliation:
Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12181
O. Aina
Affiliation:
General Electric, Corporate Research and Development, Schenectady, New York 12309
W. Katz
Affiliation:
General Electric, Corporate Research and Development, Schenectady, New York 12309
J. Norton
Affiliation:
General Electric, Corporate Research and Development, Schenectady, New York 12309
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Abstract

We present a numerical model for the calculation of the temperature rise caused by pulsed laser irradiation of a thin film/substrate structure. This model includes phase changes in both the thin film and the substrate. The inclusion of phase changes results in more complex thermal behavior and significantly affects melt durations. This model was applied to the AuGe/GaAs system. Morphological observation using the scanning electron microscope and SIMS profiles provides experimental verification for the numerical calculations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 117
Copyright
Copyright © Materials Research Society 1983

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References

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