Hostname: page-component-76fb5796d-x4r87 Total loading time: 0 Render date: 2024-04-27T03:35:43.771Z Has data issue: false hasContentIssue false
  • English
  • Français

Substrate Interactions in the Formation of Amorphous Silicon/Dielectric Interfaces

Published online by Cambridge University Press:  25 February 2011

G. N. Parsons ,
S. S. Kim  and
G. Lucovsky
G. N. Parsons
Affiliation:
North Carolina State Univ., Raleigh NC 27695-8202
S. S. Kim
Affiliation:
North Carolina State Univ., Raleigh NC 27695-8202
G. Lucovsky
Affiliation:
North Carolina State Univ., Raleigh NC 27695-8202
Get access

Abstract

Using Remote PECVD we have deposited layers of “device quality” a-Si:H and Si-based dielectrics. We find that the formation of depletion or accumulation layers at a-Si:H/dielectric interface depends on the specific dielectric (SiO2 or Si3N4) and on the film deposition sequence. In addition, we have studied process-gas/substrate interactions by in-situ Auger Electron Spectroscopy (AES) and determined that Si-O or Si-N bonds are produced at a-Si and c-Si surfaces exposed to plasma excited He/O2, or NH3 mixtures, respectively. These process-gas/substrate interactions occur in parallel with film deposition and are correlated with the electronic properties of the interfaces, and the layer deposition sequence.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 265
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Fountain, G. G., Hattangady, S. V., Rudder, R. A., Markunas, R. J., Lucovsky, G. Kim, S. S., and Tsu, D. V., J. Vac. Sci. Technol. A7 (1989).Google Scholar
[2] Yang, L., Abeles, B., Eberhardt, W., Stadiewski, H. and Sondericker, D., Phys.Rev. B39, 3801 (1989).CrossRefGoogle Scholar
[3] Parsons, G.N., Kusano, C. and Lucovsky, G., J. Vac. Sci. Technol. A5, 1655 (1987).CrossRefGoogle Scholar
[4] Chao, S.S., Tyler, J.E., Takagi, Y., Pai, P.G., Lucovsky, G., Lin, S.Y., Wong, C.K. and Mantini, M.J., J. Vac. Sci. Technol. A4, 1574 (1986).CrossRefGoogle Scholar