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Substrate Annealing and the MBE Growth of Silicon on Sapphire.

Published online by Cambridge University Press:  28 February 2011

Joe Pellegrino  and
Eliezer Richmond
Joe Pellegrino
Affiliation:
ONT Postdoctoral Fellow, Mark Twigg, GEO Centers Inc., 10903 Indian Head Highway #502, Fort Washington MD 20744
Eliezer Richmond
Affiliation:
Naval Research Laboratory, Code 6816, Washington, D.C. 20375
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Abstract

The effect of predeposition substrate annealing has been investigated for MBE grown silicon films on sapphire substrates (SOS). Films of varying thickness were grown on substrates which had been annealed at either 1450°C or 900°C. The surface morphology and crystal1inity for each film were examined. The silicon thicknesses ranged from 65-400 angstroms and the anneal time for both temperatures was 30 minutes.

The results indicate that the predeposition anneal of the sapphire substrate has a dramatic effect on the growth characteristics of the silicon film. The high temperature anneal promotes island growth of the silicon film which is easily resolved in the SEM. These islands are roughly 800 angstroms wide for a 65A thick film and grow to approximately 2200 angstroms for a 250A film. On the other hsuxi, the lower temperature anneal did not result in island formation, when examined by SEM, at any of the film thicknesses. In addition, X ray analysis reveals that the silicon layers for the high temperature anneal are epitaxial with a (100) orientation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 383
Copyright
Copyright © Materials Research Society 1988

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