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Submicron Pseudomorphic Hemt’S Using Non-Alloyed Ohmic Contacts with Contrast Enhancement.

Published online by Cambridge University Press:  25 February 2011

Ph. Jansen ,
W. De Raedt ,
M. Van Hove ,
R. Jonckheere ,
R. Pereira  and
M. Van Rossum
Ph. Jansen
Affiliation:
Interuniversity Micro-Electronics Center (IMEC) Leuven, Belgium.
W. De Raedt
Affiliation:
Interuniversity Micro-Electronics Center (IMEC) Leuven, Belgium.
M. Van Hove
Affiliation:
Interuniversity Micro-Electronics Center (IMEC) Leuven, Belgium.
R. Jonckheere
Affiliation:
Interuniversity Micro-Electronics Center (IMEC) Leuven, Belgium.
R. Pereira
Affiliation:
Interuniversity Micro-Electronics Center (IMEC) Leuven, Belgium.
M. Van Rossum
Affiliation:
Interuniversity Micro-Electronics Center (IMEC) Leuven, Belgium.
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Abstract

We report for the first time the realization of submicron pseudomorphic Al.15, Ga.85As-In.20Ga.80As HEMT’s with non-alloyed Pd/Ge ohmic coi tacts. Best results of contact resistance were obtained at a sintering temperature of 340°C with values as low as 0.057 Ωmm. Enhanced contrast, needed for accurate alignment of the gate by electron-beam lithography, was obtained by using Pd/Ge/Ti/Pd and Pd/Ge/Ti/Pt metal sequences. These contacts exhibited even lower contact resistances than the standard Pd/Ge contacts. Although Pd/Ge/Ti/Pd exhibits good morphology, reaction is witnessed at the edges, reducing the accuracy of alignment.

Processed enhancement mode devices exhibit maximum transconductances in excess of 520 mS/mm and currents of 300 mA/mm for 0.3 micron gatelength. This study shows that the contact resistance is no longer a restriction for obtaining very high transconductances in high performance devices.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 411
Copyright
Copyright © Materials Research Society 1990

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References

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