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Sublimation Growth of 6H-SiC Boule on Various a-Plane Substrates

Published online by Cambridge University Press:  21 March 2011

S. Nishino ,
T. Nishiguchi ,
Y. Masuda ,
M. Sasaki  and
S. Ohshima
S. Nishino
Affiliation:
Department of Electronics and Information Science, Faculty of Engineering and Design, Kyoto Institute of Technology, Matsugasaki, Sakyo, Kyoto 606-8585, JAPAN+81-75-724-7415, +81-75-724-7400, nishino@ipc.kit.ac.jp, nishig5t@dj,kit.ac.jp
T. Nishiguchi
Affiliation:
Department of Electronics and Information Science, Faculty of Engineering and Design, Kyoto Institute of Technology, Matsugasaki, Sakyo, Kyoto 606-8585, JAPAN+81-75-724-7415, +81-75-724-7400, nishino@ipc.kit.ac.jp, nishig5t@dj,kit.ac.jp
Y. Masuda
Affiliation:
Department of Electronics and Information Science, Faculty of Engineering and Design, Kyoto Institute of Technology, Matsugasaki, Sakyo, Kyoto 606-8585, JAPAN+81-75-724-7415, +81-75-724-7400, nishino@ipc.kit.ac.jp, nishig5t@dj,kit.ac.jp
M. Sasaki
Affiliation:
Department of Electronics and Information Science, Faculty of Engineering and Design, Kyoto Institute of Technology, Matsugasaki, Sakyo, Kyoto 606-8585, JAPAN+81-75-724-7415, +81-75-724-7400, nishino@ipc.kit.ac.jp, nishig5t@dj,kit.ac.jp
S. Ohshima
Affiliation:
Department of Electronics and Information Science, Faculty of Engineering and Design, Kyoto Institute of Technology, Matsugasaki, Sakyo, Kyoto 606-8585, JAPAN+81-75-724-7415, +81-75-724-7400, nishino@ipc.kit.ac.jp, nishig5t@dj,kit.ac.jp
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Abstract

Sublimation growth of 6H-SiC was performed on {1100} and {1120} substrates. The difference between the growth on {1100} plane and {1120} plane was observed. {1100} facet was almost flat and there were grooves oriented toward <1120> direction. The step bunching was observed on {1100} plane 5° off-axis. A lot of pits were introduced on {1120} plane of the crystal grown both on {1100} and {1120} substrates. Step flow growth toward <1120> direction created the pits on {1120} plane. It was important to grow crystal by layer by layer growth on {1120} plane. By changing the growth mode from step flow growth to layer by layer growth, pit on the {1120} plane may be reduced as same as CVD growth on {1120} plane. Growth temperature and C/Si ratio should be optimized to keep layer by layer growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 640: Symposium H – Silicon Carbide-Materials, Processing, and Devices , 2000 , H5.5
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

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