Hostname: page-component-76fb5796d-x4r87 Total loading time: 0 Render date: 2024-04-25T13:57:51.953Z Has data issue: false hasContentIssue false
  • English
  • Français

Subband Recombination in a-Si:H

Published online by Cambridge University Press:  21 February 2011

S.Q. Gu  and
P.C. Taylor
S.Q. Gu
Affiliation:
Department of Physics, University of Utah, Salt Lake City, UT 84112
P.C. Taylor
Affiliation:
Department of Physics, University of Utah, Salt Lake City, UT 84112
Get access

Abstract

Photoluminescence (PL) in a-Si:H has been studied as a function of excitation energy from above the gap down to well below the gap. Although the width of the PL peak shows no strong dependence on the excitation energy at low temperatures, the low energy tail of bandtail PL exhibits an approximately exponential drop with decreasing energy, I ≈ exp(hν/δE), where δE increases with decreasing excitation energy for excitation energy below about 1.65 eV. This behavior is attributed to the slow downward hopping of holes in the valence band tail that are generated below a thermalization threshold at low temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 771
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Street, R. A., in Semiconductors and Semimetals, Pankove, J. I. ed. (Academic, New York, 1984), Vol. 2IB, p. 191, and references therein.Google Scholar
2. Dunstan, D. J. and Boulitrop, F., Phys. Rev. B 39, 5945 (1984)Google Scholar
3. Shah, J., Baley, B.G. and Alexander, F.B., Solid State Commun. 36, 199 (1980).Google Scholar
4. Wilson, B.A. and Kerwin, T. P., Phys. Rev. B 30, 5861 (1982).Google Scholar
5. Tajima, M., Okushi, H., Yamasaki, S. and Tanaka, K., Phys. Rev. B 33, 8522 (1986)Google Scholar
6. Chen, W.C., Feldman, B.J., Bajaj, J., Tong, F.M. and Wong, G.K., Solid State Comm. 38, 199 (1981).Google Scholar
7. Street, R. A., Advances in Phys. 25, 397 (1976).CrossRefGoogle Scholar
8. Bishop, S.G., Strom, U. and Taylor, P.C., AIP. Conf. Proc. 73, 278(1981).Google Scholar
9. Gu, S.Q. and Taylor, P.C., in Amorphous Silicon Technology - 1990 (Materials Research Society, Pittsburgh, 1990), Vol. 192, p. 107.Google Scholar
10. Gu, S.Q., Taylor, P.C. and Ristein, J., J. Non-Cryst. Solids 137&138, 591 (1991).Google Scholar
11. Carius, R., in Amorphous Silicon and Related Materials, Fritzsche, H. ed. (World Scientific, 1989). p. 939.Google Scholar
12. Cody, G.D., in Semiconductors and Semimetals, Pankove, J.I. ed. (Academic, New York, 1984), Vol. 2IB, p. 11.Google Scholar
13. Yamasaki, S., Phil. Mag. B56, 79 (1987).Google Scholar
14. Gu, S.Q., Raikh, M. and Taylor, P.C., to be published.Google Scholar
15. Shklovskii, B. I., Fritzsche, H. and Baranovskii, S.D., Phys. Rev. Lett. 62, 2989 (1989).Google Scholar