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The Study on the Pt Barrier Effect in Al/Pt/Ti/n-GaAs

Published online by Cambridge University Press:  25 February 2011

T. Kuragaki ,
R. Hattori ,
K. Yajima ,
K. Sato ,
H. Takano ,
M. Otsubo  and
S. Mitsui
T. Kuragaki
Affiliation:
Optoelectronic and Microwave Devices Laboratory, Mitsubishi Electric Corporation 4–1, Mizuhara, Itami, Hyogo 664, Japan
R. Hattori
Affiliation:
Optoelectronic and Microwave Devices Laboratory, Mitsubishi Electric Corporation 4–1, Mizuhara, Itami, Hyogo 664, Japan
K. Yajima
Affiliation:
Optoelectronic and Microwave Devices Laboratory, Mitsubishi Electric Corporation 4–1, Mizuhara, Itami, Hyogo 664, Japan
K. Sato
Affiliation:
Optoelectronic and Microwave Devices Laboratory, Mitsubishi Electric Corporation 4–1, Mizuhara, Itami, Hyogo 664, Japan
H. Takano
Affiliation:
Optoelectronic and Microwave Devices Laboratory, Mitsubishi Electric Corporation 4–1, Mizuhara, Itami, Hyogo 664, Japan
M. Otsubo
Affiliation:
Optoelectronic and Microwave Devices Laboratory, Mitsubishi Electric Corporation 4–1, Mizuhara, Itami, Hyogo 664, Japan
S. Mitsui
Affiliation:
Optoelectronic and Microwave Devices Laboratory, Mitsubishi Electric Corporation 4–1, Mizuhara, Itami, Hyogo 664, Japan
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Abstract

The degradation mechanism of the Schottky contact of Al/Ti/n-GaAs and Al/Pt/Ti/n-GaAs under the heat treatment of 300°C has been investigated. Barrier height of the Al/Ti/n-GaAs Schottky contact degrades drastically after the heat treatment, in which Ti-Al alloy and Ga out-diffusion have been observed. On the other hand, the barrier height of Al/Pt/Ti/n-GaAs contacts is stable under the heat treatment and, Al-Ti alloying as well as Ga out-diffusion in the metals could not be noticed. From these results, it is presumably concluded that the degradation of the Schottky contacts under the heat treatment is closely correlated with the Ga atom out-diffusion from GaAs surface into the metal films after Al-Ti alloy reach to the GaAs surface. The barrier height reduction after the heat treatment can be explained by the formation of the donor type level at the interface due to the Ga vacancy pile-up arose from the Ga out-diffusion. Pt layer was proved to be an effective barrier suppressing the intermetallic alloying and preventing out-diffusion of Ga.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 689
Copyright
Copyright © Materials Research Society 1993

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References

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