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A Study on the Polycrystalline Silicon Germanium Gate Electrode Fabrication Technology for Cobalt Silicide Process

  • Hidekazu Sato (a1), Takae Sukegawa (a2), Toshifumi Mori (a2), Kousuke Suzuki (a2) and Haruhisa Mori (a2)...

Abstract

This paper reports the dependence on the concentration of the germanium (Ge) in polycrystalline silicon (poly-Si) cap layer on the polycrystalline silicon germanium (poly-SiGe) for low resistivity cobalt disilicide (CoSi2) formation. Particularly, we investigate the relationship between sheet resistance of CoSi2 films and concentration of Ge in cap-Si layer. The excellent value of sheet resistance (∼6 / ) is achieved by Ge concentration in cap-Si layer controlled at 2% or less for 90nm length CoSi2/poly-Si/poly-SiGe gate structure. This result indicates that conventional Co silicide process technology can be readily used even for poly-SiGe gate structure.

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1. Hu, G. J. and Bruce, R. H., IEEE Trans Electron Devices, vol. 32, No. 3, pp 584(1985).
2. Hao, M., Nayak, D. and Rakkhit, R., IEEE Electron Device Lett., vol. 18, No. 5, pp 215 (1997).
3. Yu, B., Ju, D. H., Kepler, N., King, T.J. and Hu, C., Symp. on VLSI Tech., pp 105 (1997).
4. Ponomarev, Y. V., Salm, C., Schmitz, J., Woerlee, P.H., Stolk, P. A. and Gravesteijn, D. J., IEDM Tech. Dig., pp 829 (1997).

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A Study on the Polycrystalline Silicon Germanium Gate Electrode Fabrication Technology for Cobalt Silicide Process

  • Hidekazu Sato (a1), Takae Sukegawa (a2), Toshifumi Mori (a2), Kousuke Suzuki (a2) and Haruhisa Mori (a2)...

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