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A Study on the Polycrystalline Silicon Germanium Gate Electrode Fabrication Technology for Cobalt Silicide Process

Published online by Cambridge University Press:  21 March 2011

Hidekazu Sato ,
Takae Sukegawa ,
Toshifumi Mori ,
Kousuke Suzuki  and
Haruhisa Mori
Hidekazu Sato
Affiliation:
Manufacturing Technology Development Division, FUJITSU Limited, 1500 Mizono, Tadocho, Kuwana-gun, Mie, 511-0192, JAPAN. hidekazu-s@jp.fujitsu.com
Takae Sukegawa
Affiliation:
Manufacturing Technology Development Division, FUJITSU Limited, 1500 Mizono, Tadocho, Kuwana-gun, Mie, 511-0192, JAPAN
Toshifumi Mori
Affiliation:
Manufacturing Technology Development Division, FUJITSU Limited, 1500 Mizono, Tadocho, Kuwana-gun, Mie, 511-0192, JAPAN
Kousuke Suzuki
Affiliation:
Manufacturing Technology Development Division, FUJITSU Limited, 1500 Mizono, Tadocho, Kuwana-gun, Mie, 511-0192, JAPAN
Haruhisa Mori
Affiliation:
Manufacturing Technology Development Division, FUJITSU Limited, 1500 Mizono, Tadocho, Kuwana-gun, Mie, 511-0192, JAPAN
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Abstract

This paper reports the dependence on the concentration of the germanium (Ge) in polycrystalline silicon (poly-Si) cap layer on the polycrystalline silicon germanium (poly-SiGe) for low resistivity cobalt disilicide (CoSi2) formation. Particularly, we investigate the relationship between sheet resistance of CoSi2 films and concentration of Ge in cap-Si layer. The excellent value of sheet resistance (∼6 / ) is achieved by Ge concentration in cap-Si layer controlled at 2% or less for 90nm length CoSi2/poly-Si/poly-SiGe gate structure. This result indicates that conventional Co silicide process technology can be readily used even for poly-SiGe gate structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 670: Symposium K – Gate Stack and Sillicide Issues in Silicon , 2001 , K5.10
Copyright
Copyright © Materials Research Society 2001

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References

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