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Study on the Polycrystalline Silicon Films Deposited by Inductively Coupled Plasma Chemical Vapor Deposition

Published online by Cambridge University Press:  17 March 2011

Byeong Y. Moon ,
Jae H. Youn ,
Sung H. Won ,
Jin Jang  and
Stanislaw M. Pietruszko
Byeong Y. Moon
Affiliation:
Department of Physics and Department of Information Display, Kyunghee University, Seoul, 130-701, Korea
Jae H. Youn
Affiliation:
Department of Physics and Department of Information Display, Kyunghee University, Seoul, 130-701, Korea
Sung H. Won
Affiliation:
Department of Physics and Department of Information Display, Kyunghee University, Seoul, 130-701, Korea
Jin Jang
Affiliation:
Department of Physics and Department of Information Display, Kyunghee University, Seoul, 130-701, Korea
Stanislaw M. Pietruszko
Affiliation:
Warsaw University of Technology, Institute of Microelectronics and Optoelectronics, IMiO PW, ul. Koszykowa 75, 00-662 Warsaw, Poland
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Abstract

Polycrystalline silicon thin films have been deposited by an inductively coupled plasma chemical vapor deposition using SiH4/H2 mixtures. The quality of poly-Si can be improved by increasing RF power and hydrogen dilution ratio. The poly-Si deposited at a RF power of 1000 W with an addition of H2, showed a Raman polycrystalline volume fraction of 85.7 %, FWHM of 6.4 cm−1, deposition rate of 9.64 Å/s and SEM grain size of ∼3000 Å.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 685: Symposium D – Advanced Materials and Devices for Large-Area Electronics , 2001 , D5.2.1
Copyright
Copyright © Materials Research Society 2001

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