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A Study on the Mechanism for the Influence of High Density of Defect Movement on the Leakage Current of PN Junction

  • Zhang Tonghe (a1), Zhou Shenghui (a1), Wu Yuguang (a1) and Luo Yan (a1)

Abstract

The results in the paper show that high defect density appears during rapid thermal annealing. The spreading of the defect distribution increases with increasing of the annealing time. So the leakage current increases up. It is found that the PN junction leakage current for short annealing time(5s) and for hot implantation are obviously lower than that of RT implantation. The mechanism of the leakage current reduction is discussed.

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(1) Pennycook, S.J., Narayan, J., Hollond, O.W., J.Electrochem. Soc., 132, 1962(1985).10.1149/1.2114262
(2) Fair, R.B. et, J.Electrochem. Soc., 131, 2387(1984).10.1149/1.2115263
(3) Tonghe, Zhang, Yuguang, Wu, Beijing, J. Normal University(Natural Science) 3, 41(1987).
(4) Tonghe, Zhang, Guohui, Li, Yuguang, Wu, Nuclear Techniques,11(10), 44(1988).
(5) Tonghe, Zhang, Yuguang, Wu, Yan, Luo and Guohui, Li, Microelectronics and computer, 4(10), 5(1987).
(6) Tonghe, Zhang, Yuguang, Wu and Yan, Luo, ACTA Electronica Sinica 15(4), 105(1987).
(7) Tonghe, Zhang, Shenghui, Zhou, Yuguang, Wu and Yan, Luo, Proceeding of international IC conference ICSICT-89, to be published.

A Study on the Mechanism for the Influence of High Density of Defect Movement on the Leakage Current of PN Junction

  • Zhang Tonghe (a1), Zhou Shenghui (a1), Wu Yuguang (a1) and Luo Yan (a1)

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