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A Study on the Growth of Cubic GaN Films Using an AlGaAs Buffer Layer Grown on GaAs (100) by Plasma-Assisted Molecular Beam Epitaxy

Published online by Cambridge University Press:  17 March 2011

Ryuhei Kimura ,
Kiyoshi Takahashi  and
H. T. Grahn
Ryuhei Kimura
Affiliation:
Department of Media Science, Teikyo University of Science and Technology 2525 Yatsuzawa, Uenohara, Kitatsuru-gun, Yamanashi, 409-0193, Japan
Kiyoshi Takahashi
Affiliation:
Department of Media Science, Teikyo University of Science and Technology 2525 Yatsuzawa, Uenohara, Kitatsuru-gun, Yamanashi, 409-0193, Japan
H. T. Grahn
Affiliation:
Paul Drude Institute for Solid State Electronics, Hausgvogteiplatz 5-7, 10117 Berlin, Germany
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Abstract

An investigation of the growth mechanism for RF-plasma assisted molecular beam epitaxy of cubic GaN films using a nitrided AlGaAs buffer layer was carried out by in-situ reflection high energy electron diffraction (RHEED) and high resolution X-ray diffraction (HRXRD). It was found that hexagonal GaN nuclei grow on (1, 1, 1) facets during nitridation of the AlGaAs buffer layer, but a highly pure, cubic-phase GaN epilayer was grown on the nitrided AlGaAs buffer layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G3.46
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Shen, X. Q., Ide, T., Cho, S. H., Shimizu, M., Hara, S., Okumura, H., Shimizu, S., Jpn. J. Appl. Phys., 39, L16 (2000).Google Scholar
2. Kikuchi, A., Yamada, T., Nakamura, S., Kusakabe, K., Sugihara, D., Kishino, K., Jpn. J. Appl. Phys., 39, L330 (2000).Google Scholar
3. Kimura, R. et al., J. Crystal Growth, 189/190, 406 (1998).Google Scholar
4. Tsuchiya, H., Sunaba, K., Minami, M., Suemasu, T., Hasagawa, F., Jpn. J. Appl. Phys., 37, L568 (1998).Google Scholar