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A Study on the Growth of Cubic GaN Films Using an AlGaAs Buffer Layer Grown on GaAs (100) by Plasma-Assisted Molecular Beam Epitaxy

Published online by Cambridge University Press:  17 March 2011

Ryuhei Kimura ,
Kiyoshi Takahashi  and
H. T. Grahn
Ryuhei Kimura
Affiliation:
Department of Media Science, Teikyo University of Science and Technology 2525 Yatsuzawa, Uenohara, Kitatsuru-gun, Yamanashi, 409-0193, Japan
Kiyoshi Takahashi
Affiliation:
Department of Media Science, Teikyo University of Science and Technology 2525 Yatsuzawa, Uenohara, Kitatsuru-gun, Yamanashi, 409-0193, Japan
H. T. Grahn
Affiliation:
Paul Drude Institute for Solid State Electronics, Hausgvogteiplatz 5-7, 10117 Berlin, Germany
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Abstract

An investigation of the growth mechanism for RF-plasma assisted molecular beam epitaxy of cubic GaN films using a nitrided AlGaAs buffer layer was carried out by in-situ reflection high energy electron diffraction (RHEED) and high resolution X-ray diffraction (HRXRD). It was found that hexagonal GaN nuclei grow on (1, 1, 1) facets during nitridation of the AlGaAs buffer layer, but a highly pure, cubic-phase GaN epilayer was grown on the nitrided AlGaAs buffer layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G3.46
Copyright
Copyright © Materials Research Society 2001

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References

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