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Study of the Orientation of Y1Ba2cu/3O7−x Thin Films In-Situ Prepared by Reactive Coevaporation With RF Activated Oxygen-Ozone Plasma.

Published online by Cambridge University Press:  16 February 2011

M. Nagata ,
H. Nojima ,
H. Shintaku  and
M. Koba
M. Nagata
Affiliation:
Corporate Research and Development Group, SHARP CORPORATION, 2613-1, Ichinomoto-cho, Tenri, Nara 632, JAPAN
H. Nojima
Affiliation:
Corporate Research and Development Group, SHARP CORPORATION, 2613-1, Ichinomoto-cho, Tenri, Nara 632, JAPAN
H. Shintaku
Affiliation:
Corporate Research and Development Group, SHARP CORPORATION, 2613-1, Ichinomoto-cho, Tenri, Nara 632, JAPAN
M. Koba
Affiliation:
Corporate Research and Development Group, SHARP CORPORATION, 2613-1, Ichinomoto-cho, Tenri, Nara 632, JAPAN
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Abstract

Superconducting films of Y1Ba2Cu3O7−x have been prepared in-situ onto SrTiO3 (100) substrates by reactive coevaporation with rf activated oxygenozone plasma. Crystal quality and orientation of the films were evaluated as a function of substrate temperature(Ts). The films evaporated at Ta between 680°C, and 690°C had an a,b-axis orientation perpendicular to the substrate. The zero resistance temperature(Tc) of the film evaporated at Ts, of 690°C was 80K. The films evaporated at Ta above 700°C had c-axis orientation. The Ts of the film evaporated at a Ts, of 710°C was 90K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 223: Symposium E – Low Energy Ion Beam and Plasma Modification of Materials , 1991 , 153
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1. Arikawa, T., Itozaki, H., Harada, K., Higaki, K., Tanaka, S. and Yazu, S., Jpn.J. Appl.Phys.29,2199(1990).Google Scholar
2. Asano, H., Asahi, M. and Michikami, O., Jpn.J.Appl.Phys.28,981(1989).Google Scholar
3. Terashima, Y., Sagoi, M., Kubo, K., Mizutani, Y., Miura, T., Yoshida, J. and Mizushima, K., Jpn.J.Appl.Phys.28,653(1989).Google Scholar
4. Inam, A., Rogers, C.T., Ramesh, R., Remschnig, K., Farrow, L., Hart, D., Venkatesan, T. and Wikens, B., Appl.Phys.Lett.57,2484(1990).Google Scholar
5. Terashima, T., Bando, Y., Iijima, K., Yamamoto, K. and Hirata, K., Appl.Phys. Lett.53,2232(1988).Google Scholar
6. Aida, T., Tsukamoto, A., Imagawa, K., Fukazawa, T., Saito, S., Shindo, K., Takagi, K. and Miyauchi, K., Jpn.J.Appl.Phys.28,635(1989).Google Scholar
7. Matsumoto, M., Akoh, H. and Takada, S., J.Appl.Phys.66,3907(1989).Google Scholar