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Study of the Carrier Concentration Effect on Si Enhanced AlGaAs/GaAs Superlattice Mixing

  • Ping Mei (a1), T. Venkatesan (a2), S. A. Schwarz (a2), N. G. Stoffel (a2), J. P. Harbison (a2) and L. A. Florez (a2)...

Abstract

We have investigated the carrier concentration effect on AlGaAs/GaAs superlattice mixing enhanced by Si doping. The Al0.01Ga0.99As/GaAs superlattice sample with various Si-doping concentrations was grown by molecular beam epitaxy (MBE). Secondary ion mass spectrometry (SIMS) and carrier concentration profiling were used to characterize the Al diffusion and the free-carrier concentration profiles. The Al diffusion coefficients at 800 C show a high power dependence on the free carrier concentration which is not consistent with a Ga vacancy diffusion mechanism. A possible explanation can be provided by a mechanism based on a Si pair diffusion model.

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