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Study of the Carrier Concentration Effect on Si Enhanced AlGaAs/GaAs Superlattice Mixing

Published online by Cambridge University Press:  26 February 2011

Ping Mei ,
T. Venkatesan ,
S. A. Schwarz ,
N. G. Stoffel ,
J. P. Harbison  and
L. A. Florez
Ping Mei
Affiliation:
Physics Department, Rutgers University, Piscataway, NJ 08855–0849
T. Venkatesan
Affiliation:
Bellcore, Red Bank, NJ 07701–7020
S. A. Schwarz
Affiliation:
Bellcore, Red Bank, NJ 07701–7020
N. G. Stoffel
Affiliation:
Bellcore, Red Bank, NJ 07701–7020
J. P. Harbison
Affiliation:
Bellcore, Red Bank, NJ 07701–7020
L. A. Florez
Affiliation:
Bellcore, Red Bank, NJ 07701–7020
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Abstract

We have investigated the carrier concentration effect on AlGaAs/GaAs superlattice mixing enhanced by Si doping. The Al0.01Ga0.99As/GaAs superlattice sample with various Si-doping concentrations was grown by molecular beam epitaxy (MBE). Secondary ion mass spectrometry (SIMS) and carrier concentration profiling were used to characterize the Al diffusion and the free-carrier concentration profiles. The Al diffusion coefficients at 800 C show a high power dependence on the free carrier concentration which is not consistent with a Ga vacancy diffusion mechanism. A possible explanation can be provided by a mechanism based on a Si pair diffusion model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 161
Copyright
Copyright © Materials Research Society 1988

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References

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